| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 52, № 1 (2023) |
ДИАГНОСТИКА |
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy |
(Rus)
|
| Том 52, № 2 (2023) |
ДИАГНОСТИКА |
SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits |
(Rus)
|
| Том 52, № 1 (2023) |
ДИАГНОСТИКА |
Электрофизические характеристики и эмиссионные спектры плазмы тетрафторметана |
(Rus)
|
| Том 52, № 1 (2023) |
ИСКУССТВЕННЫЙ ИНТЕЛЛЕКТ |
Искусственный интеллект никогда не заменит полностью человека |
(Rus)
|
| Том 52, № 2 (2023) |
QUANTUM TECHNOLOGIES |
Investigation of the Possibility of Optimizing the Interaction of NV Centers and Photons by Changing the Shape of Microresonators |
(Rus)
|
| Том 52, № 1 (2023) |
МОДЕЛИРОВАНИЕ ПРИБОРОВ |
Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |
(Rus)
|
| Том 52, № 2 (2023) |
LITHOGRAPHY |
Cross Sections of Scattering Processes in Electron-Beam Lithography |
(Rus)
|
| Том 52, № 1 (2023) |
МОДЕЛИРОВАНИЕ ТЕХНОЛОГИЧЕСКИХ ПРОЦЕССОВ |
Simulation of Supercell Defect Structure and Transfer Phenomena in TlInTe2 |
(Rus)
|
| Том 52, № 1 (2023) |
МОДЕЛИРОВАНИЕ ТЕХНОЛОГИЧЕСКИХ ПРОЦЕССОВ |
Разработка методики построения нелинейной модели метаморфного 0.15 мкм МHEMT InAlAs/InGaAs транзистора |
(Rus)
|
| Том 52, № 2 (2023) |
ПРИБОРЫ |
Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures |
(Rus)
|
| Том 52, № 1 (2023) |
ПРИБОРЫ |
Study of Photodetectors with Schottky Barriers Based on the IrSi–Si Contact |
(Rus)
|
| Том 52, № 1 (2023) |
ПРИБОРЫ |
Контактно-транспортные и автоэмиссионные свойства низкоразмерных 2D углеродных гетероструктур |
(Rus)
|
| Том 52, № 2 (2023) |
ТЕХНОЛОГИИ |
Plasma Parameters and Kinetics of Reactive Ion Etching of SiO2 and Si3N4 in an HBr/Cl2/Ar Mixture |
(Rus)
|
| Том 52, № 2 (2023) |
ТЕХНОЛОГИИ |
Investigation of the Optical Properties of Ultrathin Films Based on Metal Silicide |
(Rus)
|
| Том 52, № 1 (2023) |
ТЕХНОЛОГИИ |
Параметры газовой фазы и кинетика реактивно-ионного травления SiO2 в плазме CF4/C4F8/Ar/He |
(Rus)
|
| Том 52, № 3 (2023) |
ДИАГНОСТИКА |
Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates |
(Rus)
|
| Том 52, № 4 (2023) |
QUANTUM TECHNOLOGIES |
Tomography of Detectors Taking Dead Time into Account |
(Rus)
|
| Том 52, № 5 (2023) |
ДИАГНОСТИКА |
Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane |
(Rus)
|
| Том 52, № 3 (2023) |
QUANTUM TECHNOLOGIES |
Precise Tomography of Qudits |
(Rus)
|
| Том 52, № 4 (2023) |
MODELING |
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric |
(Rus)
|
| Том 52, № 3 (2023) |
QUANTUM TECHNOLOGIES |
Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots |
(Rus)
|
| Том 52, № 5 (2023) |
LITHOGRAPHY |
Protective Freely Hanging Films for Projection Lithography Installations in the Extreme UV Range |
(Rus)
|
| Том 52, № 4 (2023) |
MODELING |
Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film |
(Rus)
|
| Том 52, № 5 (2023) |
MODELING |
Simulation of the Effect of Lattice Defects on the Work of Separating Joined Materials |
(Rus)
|
| Том 52, № 5 (2023) |
MODELING |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure |
(Rus)
|
| Том 52, № 3 (2023) |
MODELING |
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor |
(Rus)
|
| Том 52, № 4 (2023) |
НАДЕЖНОСТЬ |
Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
(Rus)
|
| Том 52, № 3 (2023) |
MODELING |
Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery |
(Rus)
|
| Том 52, № 5 (2023) |
ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ |
The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma |
(Rus)
|
| Том 52, № 5 (2023) |
MEMORY |
Patterns of the Formation of Mobile Localized Magnetic Configurations and Technology for Manufacturing Structures for the Implementation of Magnetic Memory Elements |
(Rus)
|
| Том 52, № 4 (2023) |
НАДЕЖНОСТЬ |
Single Event Displacement Effects in a VLSI |
(Rus)
|
| Том 52, № 5 (2023) |
ПРИБОРЫ |
Neuromorphic Systems: Devices, Architecture, and Algorithms |
(Rus)
|
| Том 52, № 3 (2023) |
МЭМС–УСТРОЙСТВА |
Fast Electrochemical Micropump for Portable Drug Delivery Module |
(Rus)
|
| Том 52, № 4 (2023) |
ПЛАЗМЕННЫЕ ТЕХНОЛОГИИ |
Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures |
(Rus)
|
| Том 52, № 4 (2023) |
ПРИБОРЫ |
Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes |
(Rus)
|
| Том 52, № 3 (2023) |
ТЕХНОЛОГИИ |
Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology |
(Rus)
|
| Том 52, № 4 (2023) |
ПРИБОРЫ |
Multilevel Memristive Structures Based on YBa2Cu3O7–δ Epitaxial Films |
(Rus)
|
| Том 52, № 3 (2023) |
УСТРОЙСТВА |
Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
(Rus)
|
| Том 52, № 5 (2023) |
ПРИБОРЫ |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region |
(Rus)
|
| Том 52, № 4 (2023) |
СЕНСОРЫ |
Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation |
(Rus)
|
| Том 52, № 5 (2023) |
ТЕХНОЛОГИИ |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures |
(Rus)
|
| Том 52, № 4 (2023) |
ТЕХНОЛОГИИ |
Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature |
(Rus)
|
| Том 52, № 4 (2023) |
ТЕХНОЛОГИИ |
Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition |
(Rus)
|
| Том 52, № 6 (2023) |
ДИАГНОСТИКА |
PROBE AND SPECTRAL DIAGNOSTICS OF PLASMA GAS ENVIRONMENT: BCl3-Cl2 |
(Rus)
|
| Том 52, № 6 (2023) |
МЭМС-УСТРОЙСТВА |
MEMS SWITCH BASED ON CANTILEVER WITH INCREASED CONTACT FORCE |
(Rus)
|
| Том 52, № 6 (2023) |
MODELING |
Simulation of vertical ballistic quantum-barrier field-effect transistor based on undoped AlxGa1–xAs quantum nanowire |
(Rus)
|
| Том 52, № 6 (2023) |
MODELING |
Performance calculation for a MEMS switch with «floating» electrode |
(Rus)
|
| Том 52, № 6 (2023) |
ПРИБОРЫ |
Electrophysical parameters of p-i-n photodiodes, irradiated with 60Co γ-quanta |
(Rus)
|
| Том 52, № 6 (2023) |
ПРИБОРЫ |
OPTICALLY PUMPED BIPOLAR TRANSISTOR |
(Rus)
|
| Том 52, № 6 (2023) |
ПРИБОРЫ |
Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain |
(Rus)
|
| Том 52, № 6 (2023) |
ПРИБОРЫ |
Design of integrated voltage multipliers using standard CMOS technologies |
(Rus)
|
| Том 53, № 1 (2024) |
ДИАГНОСТИКА |
Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping |
(Rus)
|
| Том 53, № 1 (2024) |
ДИАГНОСТИКА |
Structuring of the Surface of Thin Carbon Films During Activation by Microsecond Current Pulses |
(Rus)
|
| Том 53, № 1 (2024) |
MODELING |
Modeling of Physical-Chemical and Electronic Properties of Lithium-Containing 4H—SiC and Binary Phases of the Si—C–Li System |
(Rus)
|
| Том 53, № 1 (2024) |
MODELING |
Modeling of the Electronic Properties of M-Doped Supercells (М = Zr, Nb) with a Monoclinic Structure For Lithium-Ion Batteries |
(Rus)
|
| Том 53, № 1 (2024) |
ПРИБОРЫ |
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter |
(Rus)
|
| Том 53, № 1 (2024) |
ПРИБОРЫ |
Research of Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems |
(Rus)
|
| Том 53, № 1 (2024) |
ТЕХНОЛОГИИ |
Application of Spectral Ellipsometry for Dielectric, Metal and Semiconductor Films in Microelectronics Technology |
(Rus)
|
| Том 53, № 1 (2024) |
ТЕХНОЛОГИИ |
Features of Electroforming and Functioning of Memristors Based on Open TiN–SiO2–Mo Sandwich Structures |
(Rus)
|
| Том 53, № 1 (2024) |
ТЕХНОЛОГИИ |
Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides |
(Rus)
|
| Том 53, № 1 (2024) |
ТЕХНОЛОГИИ |
Parameters and Composition of Plasma in a Mixture of CF4 + H2 + Ar: Effect of the CF4/H2 Ratio |
(Rus)
|
| Том 53, № 1 (2024) |
ТЕХНОЛОГИИ |
Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node |
(Rus)
|
| Том 53, № 2 (2024) |
ДИАГНОСТИКА |
Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters |
(Rus)
|
| Том 53, № 2 (2024) |
MODELING |
Modeling the diffusion of atoms in multicomponent semiconductors in a disordered state |
(Rus)
|
| Том 53, № 2 (2024) |
MODELING |
Application of the finite element method for calculating the surface acoustic wave parameters and devices |
(Rus)
|
| Том 53, № 2 (2024) |
MODELING |
The new approach of a simulation low dose rate radiation effects in bipolar integrated circuits |
(Rus)
|
| Том 53, № 2 (2024) |
ТЕХНОЛОГИИ |
Ripple of a DC/DC converter based on SEPIC topology |
(Rus)
|
| Том 53, № 2 (2024) |
ТЕХНОЛОГИИ |
Temporary changes in current flow mechanisms in erbium-doped porous silicon |
(Rus)
|
| Том 53, № 2 (2024) |
ТЕХНОЛОГИИ |
Influence of nickel impurities on the operational parameters of a silicon solar cell |
(Rus)
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| Том 53, № 3 (2024) |
ДИАГНОСТИКА |
A comprehensive study of nonuniformity properties of the LiCoO2 thin-film cathode fabricated by RF sputtering |
(Rus)
|
| Том 53, № 3 (2024) |
ДИАГНОСТИКА |
Influence of Hydrogen Additive on Electrophysical Parameters and Emission Spectra of Tetrafluoromethane Plasma |
(Rus)
|
| Том 53, № 3 (2024) |
MODELING |
Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs |
(Rus)
|
| Том 53, № 3 (2024) |
MODELING |
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate |
(Rus)
|
| Том 53, № 3 (2024) |
MODELING |
Kinetics of electromigration mass transfer in micro- and nanoelectronics interface elements depending on the strength of thin-film junctions |
(Rus)
|
| Том 53, № 3 (2024) |
MEMORY |
The structure and formation of non-volatile memory cells of Superflash |
(Rus)
|
| Том 53, № 3 (2024) |
ПРИБОРЫ |
Development of the Ge-MDST instrument structure with an induced p-type channel |
(Rus)
|
| Том 53, № 3 (2024) |
ПРИБОРЫ |
Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier |
(Rus)
|
| Том 53, № 3 (2024) |
ПРИБОРЫ |
The Effect оf Laser Radiation оn Functional Properties of MOS Structures |
(Rus)
|
| Том 53, № 4 (2024) |
ДИАГНОСТИКА |
Study of the Photovoltaic Parameters of Inorganic Solar Cells Based on Cu2O and CuO |
(Rus)
|
| Том 53, № 4 (2024) |
QUANTUM TECHNOLOGIES |
CNOT Quantum Gate Based on Spatial Photonic Qubits Under Resonant Electro-Optical Control |
(Rus)
|
| Том 53, № 4 (2024) |
MEMRISTORS |
Evolution of the Current-Voltage Characteristic of a Bipolar Memristor |
(Rus)
|
| Том 53, № 4 (2024) |
MODELING |
Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensitivity Enhancement |
(Rus)
|
| Том 53, № 4 (2024) |
ТЕХНОЛОГИИ |
Methodology of Production of Photo-Sensitive Elements on Ptsi Basis |
(Rus)
|
| Том 53, № 4 (2024) |
ТЕХНОЛОГИИ |
Al Islands on Si(111): Growth Temperature, Morphology and Strain |
(Rus)
|
| Том 53, № 4 (2024) |
ТЕХНОЛОГИИ |
Plasmochemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium |
(Rus)
|
| Том 54, № 1 (2025) |
ТЕХНОЛОГИИ |
AZ nLOF series photoresist films on monocrystalline silicon |
|
| Том 53, № 5 (2024) |
ДИАГНОСТИКА |
Electron cyclotron resonance plasma studies using the second cyclotron harmonic resonance |
(Rus)
|
| Том 53, № 5 (2024) |
QUANTUM TECHNOLOGIES |
Nanophotonic beam-splitter based on quantum dots with förster coupling |
(Rus)
|
| Том 53, № 5 (2024) |
LITHOGRAPHY |
New concept for the development of high-performance X-ray lithography |
(Rus)
|
| Том 53, № 5 (2024) |
MODELING |
Electron transport and field electron emission mechanisms in 2D noncrystalline hetero structures with quantum barrier |
(Rus)
|
| Том 53, № 5 (2024) |
MODELING |
Mathematical modeling of a microprocessor liquid cooling system |
(Rus)
|
| Том 53, № 5 (2024) |
MODELING |
Parameters matching of the thermoelectric system parameters for cooling heat-loaded electronics elements |
(Rus)
|
| Том 53, № 5 (2024) |
MODELING |
Investigation of ways to synthesize concurrent error-detection circuits based on boolean signals correction using uniform separable codes |
(Rus)
|
| Том 53, № 5 (2024) |
NEUROMORPHIC SYSTEMS |
Development of an imagery representation apparatus for information representation in neyromorphic devices |
(Rus)
|
| Том 53, № 5 (2024) |
ПРИБОРЫ |
Temperature dependences of the breakdown voltage of a high-voltage LDMOS transistor |
(Rus)
|
| Том 53, № 5 (2024) |
ТЕХНОЛОГИИ |
Producing of graphene: deposition and annealing |
(Rus)
|
| Том 53, № 6 (2024) |
ДИАГНОСТИКА |
Gas Phase Composition and Fluorine Atom Kinetics in SF6 Plasma |
(Rus)
|
| Том 53, № 6 (2024) |
QUANTUM TECHNOLOGIES |
Influence of Manufacture Imperfections and Electrical Noise on Evolution of a Charge Qubit under Optical Control |
(Rus)
|
| Том 53, № 6 (2024) |
MEMRISTORS |
Simulation of Memristive Crossbar Array Electrical Behavior in Neuromorphic Electronic Blocks |
(Rus)
|
| Том 53, № 6 (2024) |
MEMRISTORS |
A Brief Overview of the Typology of Neurons and Analysis of Using Memristor Crossbars |
(Rus)
|
| Том 53, № 6 (2024) |
MODELING |
Modeling of Structural Properties and Transport Phenomena in Doped Multicomponent 2D Semiconductors |
(Rus)
|
| Том 53, № 6 (2024) |
ПРИБОРЫ |
III-nitride HEMT Heterostructures with an Ultrathin AlN Barrier: Fabrication and Experimental Application |
(Rus)
|
| Том 53, № 6 (2024) |
ПРИБОРЫ |
Tunnel Breakdown Bipolar Transistor |
(Rus)
|
| Том 53, № 6 (2024) |
ТЕХНОЛОГИИ |
Plasma Parameters and Si/SiO2 Etching Kinetics in Mixtures of Fluorocarbon Gases with Argon and Helium |
(Rus)
|
| Том 53, № 6 (2024) |
ТЕХНОЛОГИИ |
Conductivity Study of Carbon Nanotubes Deposited on Iridium Silicon-Silicide Substrate |
(Rus)
|
| Том 54, № 1 (2025) |
LITHOGRAPHY |
Investigation of double patterning method with the usage of antispacer |
|
| Том 54, № 1 (2025) |
MODELING |
Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models |
|
| Том 54, № 1 (2025) |
MODELING |
Exposure kinetics of a positive photoresist layer on an optically matched substrate |
|
| Том 54, № 1 (2025) |
MODELING |
Influence of boundary conditions on transport in a quantum well |
|
| Том 54, № 1 (2025) |
NANOSTRUCTURES |
Formation of nickel-based composite magnetic nanostructures for microelectronics and nanodiagnostics devices |
|
| Том 54, № 1 (2025) |
ТЕХНОЛОГИИ |
Study of deposition modes of Cu2O films by RF magnetron sputtering for application in solar cell structures |
|
| Том 54, № 1 (2025) |
ТЕХНОЛОГИИ |
Development of atomic layer deposition technological platform for the synthesis of micro- and nanoelectronics materials |
|
| Том 54, № 2 (2025) |
ДИАГНОСТИКА |
Regularities of X-ray transfer in doped multicomponent semiconductors for dosimetry |
|
| Том 54, № 2 (2025) |
ДИАГНОСТИКА |
Measuring adhesion energy between MEMS structures using an adhered cantilever |
|
| Том 54, № 2 (2025) |
MEMRISTORS |
Multilevel switchings in memristive structures based on oxidized lead selenide |
|
| Том 54, № 2 (2025) |
NANOSTRUCTURES |
Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm² |
|
| Том 54, № 2 (2025) |
NANOTRANSISTORS |
Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors |
|
| Том 54, № 2 (2025) |
ПРИБОРЫ |
Ferroelectric transistors: operating principles, materials, applications |
|
| Том 54, № 2 (2025) |
ТЕХНОЛОГИИ |
PRECISION ETCHING OF ALUMINUM CONDUCTORS IN THE TECHNOLOGY OF SWITCHING DEVICES OF MICROSYSTEMS TECHNOLOGY |
|
| Том 54, № 3 (2025) |
ДИАГНОСТИКА |
Method for automated calculation of grains and voids in metal films and TSV-structures |
|
| Том 54, № 3 (2025) |
ДИАГНОСТИКА |
Structure of thin titanium nitride films deposited by magnetron sputtering |
|
| Том 54, № 3 (2025) |
MEMRISTORS |
Reinforcement learning of spiking neural networks using trace variables for synaptic weights with memristive plasticity |
|
| Том 54, № 3 (2025) |
MEMRISTORS |
STABILIZATION OF MEMRISTOR CELL STATES DURING INITIAL SWITCHING PROCESS AFTER FORMING |
|
| Том 54, № 3 (2025) |
MODELING |
Features of upsets formation in VLSI under pulsed ionizing radiation |
|
| Том 54, № 3 (2025) |
ПРИБОРЫ |
Temperature characteristics of a simple current mirror on silicon high-voltage nLDMOS with a large drift area |
|
| Том 54, № 3 (2025) |
ТЕХНОЛОГИИ |
NANOSTRUCTURED RUTHENIUM ETCHING IN THREE-COMPONENT Cl2/O2/Ar PLASMA |
|
| Том 54, № 3 (2025) |
ТЕХНОЛОГИИ |
Self-assembly of 3d mesostructures using local ion-plasma treatment |
|
| Том 54, № 4 (2025) |
QUANTUM TECHNOLOGIES |
Development of a correlator for measuring the second-order autocorrelation function of single-photon sources |
|
| Том 54, № 4 (2025) |
LITHOGRAPHY |
Perspectives of electron-beam and ion-beam lithography development in Russia |
|
| Том 54, № 4 (2025) |
MODELING |
Modeling of Self-Assembly of Microinductors Produced Due to Residual Mechanical Stress |
|
| Том 54, № 4 (2025) |
MODELING |
Electrical conductivity of a thin polycrystalline film considering various specularity coefficients |
|
| Том 54, № 4 (2025) |
NEUROMORPHIC SYSTEMS |
Training of a Spiking Neural Network with a Consideration of Memristive Crossbar Array Characteristics |
|
| Том 54, № 4 (2025) |
NEUROMORPHIC SYSTEMS |
Hardware implementation of an asynchronous analog neural network with training based on unified cmos ip blocks |
|
| Том 54, № 4 (2025) |
ТЕХНОЛОГИИ |
Effect of rapid thermal annealing on the formation of aluminum-silicon and aluminum-polysilicon ohmic contacts in integrated microcircuits |
|
| Том 54, № 4 (2025) |
ТЕХНОЛОГИИ |
MULTILAYER EPITAXIAL SILICON STRUCTURES WITH SUBMICRON LAYERS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXI |
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| Том 54, № 5 (2025) |
ДИАГНОСТИКА |
Method for testing the radiation resistance of semiconductor electronic materials in an electron microscope |
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| Том 54, № 5 (2025) |
ДИАГНОСТИКА |
Complementary studies of aluminum thin films: resistivity and real structure |
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| Том 54, № 5 (2025) |
QUANTUM TECHNOLOGIES |
Precise reconstruction of polarization quantum states under noisy measurement conditions |
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| Том 54, № 5 (2025) |
MODELING |
On the correctness of the model description of the plasma composition in the mixture of SF 6 + He + O 2 |
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| Том 54, № 5 (2025) |
ПРИБОРЫ |
Structure and materials of FinFET transistors |
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| Том 54, № 5 (2025) |
ТЕХНОЛОГИИ |
Processing of Silicon Carbide Plates with Bonded Diamond Tools |
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| Том 54, № 5 (2025) |
ТЕХНОЛОГИИ |
On the influence of various oxygen-containing gases on composition of trifluoromethane plasma |
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| Том 54, № 5 (2025) |
ТЕХНОЛОГИИ |
Deformation of MEMS Transducer Membrane Due to Stress in Deposited Film |
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| Том 54, № 6 (2025) |
QUANTUM TECHNOLOGIES |
DESIGN OF FUZZY QUANTUM MEASUREMENT PROTOCOLS FOR ION-BASED QUDITS |
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| Том 54, № 6 (2025) |
LITHOGRAPHY |
STABILIZING PROCESSING OF NEGATIVE PHOTORESIST FILMS OF THE AZ nLOF20XX SERIES ON SILICON |
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| Том 54, № 6 (2025) |
MEMRISTORS |
FEATURES OF RESISTIVE SWITCHING OF MEMRISTORS BASED ON PbTe NANOPARTICLES WITH PPX UNDER PHOTOEXCITATION |
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| Том 54, № 6 (2025) |
MODELING |
FLUOROPOLYMER FOR MICROELECTRONICS PRODUCTION (REVIEW) |
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| Том 54, № 6 (2025) |
MODELING |
A COMPACT ELECTROSTATIC ACTUATOR WITH ENHANCED CONTACT FORCE FOR RESISTIVE MEMS SWITCH |
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| Том 54, № 6 (2025) |
NANOSTRUCTURES |
INVESTIGATION OF THE MAGNETO-OPTICAL RESPONSE OF INDIVIDUAL LAYERS OF MULTILAYER MAGNETIC SYSTEMS |
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| Том 54, № 6 (2025) |
MEMORY |
TERNARY MEMORY CELLS BASED ON PERFORATED MAGNETIC FILMS |
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