Email this article 
AZ nLOF series photoresist films on monocrystalline silicon
- Authors: Brinkevich D.I.1, Grinyuk E.V.1, Prosolovich V.S.1, Zubova O.A.2, Kolos V.V.2, Brinkevich S.D.3, Vabishchevich S.A.4
-
Affiliations:
- Belarusian State University
- JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company
- LLC “My Medical Center – High Technologies”
- Polotsk State University
- Issue: Vol 54, No 1 (2025)
- Pages: 55–63
- Section: ТЕХНОЛОГИИ
- URL: https://bakhtiniada.ru/0544-1269/article/view/278377
- DOI: https://doi.org/10.31857/S0544126925010068
- EDN: https://elibrary.ru/GIFZZB
- ID: 278377
Cite item
Open Access
Access granted
Abstract
Films of negative photoresists (FR) AZ nLOF 2020, AZ nLOF 2070 and AZ nLOF 5510 with a thickness of 0.99–6.0 microns deposited on the surface of silicon wafers by centrifugation have been studied by the methods of microindentation and IR Fourier spectroscopy using a diffuse reflection module. It has been established that FR films behave like elastoplastic materials in which tensile elastic stresses are present. The most intense in the reflective absorption spectra of AZ nLOF photoresistive films are bands of valence vibrations of the aromatic ring (≈ 1500 cm–1), pulsation vibrations of the aromatic ring carbon skeleton (double maximum ≈ 1595 and 1610 cm–1), a wide structured band with several maxima in the range of 1050–1270 cm–1 and a band with a maximum of ≈ 1430 cm–1 due to vibrations of the benzene ring, associated with the CH2 bridge. It is shown that the line corresponding to the vibrations of the CH3 groups with a maximum at 2945 cm–1 is caused by the solvent. The differences in the FR spectra of AZ nLOF 2020 and AZ nLOF 2070 are associated with the presence of a residual solvent in the films and the interaction of its molecules with the aromatic rings of the main FR component – phenol-formaldehyde.
Keywords
Full Text
About the authors
D. I. Brinkevich
Belarusian State University
Author for correspondence.
Email: brinkevich@bsu.by
Belarus, Minsk
E. V. Grinyuk
Belarusian State University
Email: brinkevich@bsu.by
Belarus, Minsk
V. S. Prosolovich
Belarusian State University
Email: prosoloch@bsu.by
Belarus, Minsk
O. A. Zubova
JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company
Email: brinkevich@bsu.by
Belarus, Minsk
V. V. Kolos
JSC “INTEGRAL” – “INTEGRAL” Holding Managing Company
Email: brinkevich@bsu.by
Belarus, Minsk
S. D. Brinkevich
LLC “My Medical Center – High Technologies”
Email: brinkevich@bsu.by
Russian Federation, Leningrad region
S. A. Vabishchevich
Polotsk State University
Email: brinkevich@bsu.by
Belarus, Novopolotsk
References
- AZ nLOF 20xx negative resist // www.microchemicals.com/products/photoresists
- Brinkevich D.I., Kharchenko A.A., Prosolovich V.S., Odzhaev V.B., Brinkevich S.D., Yankovski Yu.N. Reflection spectra modification of diazoquinone-novolak photoresist implanted with B and P ions // Russian Microelectronics. 2019. V. 48. No 3. P. 197–201. https://doi.org/10.1134/S1063739719020021
- Poljansek I., Sebenik U., Krajnc M. Characterization of phenol-urea-formaldehyde resin by inline FTIR spectroscopy// Journal of Applied Polymer Science. 2006. V. 99. No 5. P. 2016–2028. https://doi.org/10.1002/app.22161
- Brinkevich S.D., Brinkevich D.I., Prosolovich V.S., Lastovskii S.B., Pyatlitski A.N. Frustrated total internal reflection spectra of diazoquinone-novolac photoresist films // Journal of Applied Spectroscopy. 2021. V. 87. No 6 P. 1072–1078. https://doi.org/10.1007/s10812-021-01111-9
- Brinkevich D.I., Grinyuk E.V., Brinkevich S.D., Prosolovich V.S., Kolos V.V., Zubova O.A., Lastovskii S.B. Fourier-IR spectroscopy of photoresist/silicon structures for explosive lithography // Journal of Applied Spectroscopy. 2024. V. 90. No 6. P. 1223–1228. https://doi.org/10.1007/s10812-024-01657-4
- Brinkevich S.D., Grinyuk E.V., Brinkevich D.I., Prosolovich V.S. Modification of Diazoquinone–Novolac Photoresist Films beyond the Region of Implantation of Ions // High energy chemistry. 2020. V. 54. No 5. P. 342–351. https://doi.org/10.1134/S0018143920050045
- Garcia I.T.S., Zawislak F.C., Samios D. The effects of nuclear and electronic stopping powers on ion irradiated novolac–diazoquinone films // Applied Surface Science. 2004. V. 228. No 1–4. P. 63–76. https://doi.org/10.1016/j.apsusc.2003.12.027
- Tarasevich B.N. IK spektry osnovnyh klassov organicheskih soedinenij. Spravochnye materialy. Moscow: MGU. 2012. 55 p. (In Russ.).
- Brinkevich D.I., Brinkevich S.D., Petlitsky A.N., Prosolovich V.S. Transformation of the Spectra of a Attenuated Total Reflection when Drying a Diazoquinone-Novolach Photoresist // Russian Microelectronics. 2021. V. 50. No 4. Р. 239–245. https://doi.org/10.1134/S106373972104003X
- Odzhaev V.B., Pyatlitski A.N., Prosolovich V.S., Kovalchuk N.S., Soloviev Ya.A., Zhygulin D.V., Shestovsky D.V., Yankovski Yu.N., Brinkevich D.I. Attenuated Total Reflection Spectra of Nitrided /Si Structures // Journal of Applied Spectroscopy. 2022. V. 89. No 4. P. 665–670. https://doi.org/10.1007/s10812-022-01408-3
- Pretsch E., Bühlmann P., Affolter C. Structure Determination of Organic Compounds, Berlin: Springer, 2000.
- Brinkevich S.D., Brinkevich D.I., Prosolovich V.S., Sverdlov R.L. Radiation-Induced Processes in Diazoquinone–Novolac Resist Films under Irradiation with γ-Rays // High Energy Chemistry. 2021. V. 55. No 1. P. 65–74. https://doi.org/10.1134/S0018143921010070
- Brinkevich D.I., Prasalovich U.S., Yankovski Yu.N. Modification of diazoquinone-novolac photoresist films by boron ion implantation // Journal of the Belarusian State University. Physics. 2020. No 2. P. 62–69. (In Russ., abstr. in Engl.). https://doi.org/10.33581/2520-2243-2020-2-62-69
- Brinkevich D.I., Prosolovich V.S., Kolos V.V., Zubova O.A., Vabishchevich S.A. Infrared Fourier spectroscopy of diffuse reflection of the AZ nLOF series negative photoresists films on monocrystalline silicon // Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental’nye nauki (In Russ., abstr. in Engl.). 2024. No 2(43). P. 34–40. https://doi.org/10.52928/2070-1624-2024-43-2-34-40
Supplementary files
