STABILIZATION OF MEMRISTOR CELL STATES DURING INITIAL SWITCHING PROCESS AFTER FORMING

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Аннотация

A self-consistent model describing the break/restoration of a conducting channel-filament in a memristor cell based on the transport of oxygen vacancies in transition metal oxides is build. The stabilization of the memristor cell conductivity during initial switching from a low-resistance state to a high-resistance state and back is studied.

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Авторлар туралы

A. Fadeev

NRC “Kurchatov Institute” – Valiev IPT

Хат алмасуға жауапты Автор.
Email: AlexVFadeev@gmail.com
Moscow, Russia

K. Rudenko

NRC “Kurchatov Institute” – Valiev IPT

Email: rudenko@ftian.ru
Moscow, Russia

Әдебиет тізімі

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