STABILIZATION OF MEMRISTOR CELL STATES DURING INITIAL SWITCHING PROCESS AFTER FORMING
- 作者: Fadeev A.V.1, Rudenko K.V.1
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隶属关系:
- NRC “Kurchatov Institute” – Valiev IPT
- 期: 卷 54, 编号 3 (2025)
- 页面: 224-231
- 栏目: MEMRISTORS
- URL: https://bakhtiniada.ru/0544-1269/article/view/304934
- DOI: https://doi.org/10.31857/S0544126925030044
- EDN: https://elibrary.ru/pxfokm
- ID: 304934
如何引用文章
详细
A self-consistent model describing the break/restoration of a conducting channel-filament in a memristor cell based on the transport of oxygen vacancies in transition metal oxides is build. The stabilization of the memristor cell conductivity during initial switching from a low-resistance state to a high-resistance state and back is studied.
作者简介
A. Fadeev
NRC “Kurchatov Institute” – Valiev IPT
编辑信件的主要联系方式.
Email: AlexVFadeev@gmail.com
Moscow, Russia
K. Rudenko
NRC “Kurchatov Institute” – Valiev IPT
Email: rudenko@ftian.ru
Moscow, Russia
参考
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