NANOSTRUCTURED RUTHENIUM ETCHING IN THREE-COMPONENT Cl2/O2/Ar PLASMA
- 作者: Amirov I.I.1, Izyumov M.O.1, Lopaev D.V.2, Rakhimova T.V.2, Kropotkin A.N.2, Voloshin D.G.2, Palov A.P.2
-
隶属关系:
- The Center for Scientific and Information Technologies – Yaroslavl of the K.A. Valiev Department of Physico-Technological Research of the National Research Center “Kurchatov Institute”
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
- 期: 卷 54, 编号 3 (2025)
- 页面: 251-260
- 栏目: ТЕХНОЛОГИИ
- URL: https://bakhtiniada.ru/0544-1269/article/view/304937
- DOI: https://doi.org/10.31857/S0544126925030076
- EDN: https://elibrary.ru/pxpxqe
- ID: 304937
如何引用文章
详细
Using spectral and probe diagnostic methods for the radical composition and electronic component of the removed plasma of an RF discharge in a mixture of 50 %Ar/Сl2 /O2, low-energy (Ei ~80 eV) etching of a nanometer-thick Ru film was studied depending on pressure, RF power, and relative content of Сl2 /O2. With a 10–30 percent chlorine content in the plasma, a wide maximum of the Ru etching rate is observed. In a plasma of this composition, using an array of amorphous silicon nanoconuses as a mask, vertical nanoconded Ru structures with a height of 35 nm and a distance between them of 10–20 nm were obtained. The mechanism of Ru etching in plasma of 50 %Ar/Сl2 /O2 is discussed.
作者简介
I. Amirov
The Center for Scientific and Information Technologies – Yaroslavl of the K.A. Valiev Department of Physico-Technological Research of the National Research Center “Kurchatov Institute”
Email: ildamirov@yandex.ru
Yaroslavl, Russia
M. Izyumov
The Center for Scientific and Information Technologies – Yaroslavl of the K.A. Valiev Department of Physico-Technological Research of the National Research Center “Kurchatov Institute”
Email: ildamirov@yandex.ru
Yaroslavl, Russia
D. Lopaev
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: ildamirov@yandex.ru
Moscow, Russia
T. Rakhimova
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: ildamirov@yandex.ru
Moscow, Russia
A. Kropotkin
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: ildamirov@yandex.ru
Moscow, Russia
D. Voloshin
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
Email: ildamirov@yandex.ru
Moscow, Russia
A. Palov
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
编辑信件的主要联系方式.
Email: ildamirov@yandex.ru
Moscow, Russia
参考
- Kim S.K., Popovici M. Future of dynamic random-access memory as main memory // MRS Bulletin, 2018. V. 40. P. 334–338.
- Kim S.E., Sung J.Y., Jeon J.D., Jang S.Y., Lee H.M., Moon S.M., et.al. Toward advanced high-k and electrode thin films for DRAM capacitors via atomic layer deposition // Adv. Mater. Technol. 2023. V. 8. P. 2200878.
- Gall D. The search for the most conductive metal for narrow interconnect lines // J. Appl. Phys. 2020. V. 127. P. 050901.
- Barmak K., Ezzat S., Gusley R., Jog A., Kerdsongpanya S., Khaniya A., Milosevic E., Richardson W., Sentosun K., Zangiabadi A., Gall D., Kaden W.E., Mucciolo E.R., Schelling P.K., West A.C., Coffey K.R. Epitaxial metals for interconnects beyond Cu // J. Vac. Sci. Technol. A. 2020. V. 38. P. 033406.
- Paolillo S., Wan D., Lazzarino F., Rassoul N., Piumi D., Tőkei Z. Direct metal etch of ruthenium for advanced interconnect // J. Vac. Sci. Technol. B. 2018. V. 36. P. 3E103-1.
- Decoster S., Camerotto E., Murdoch G., Kundu S., Le Q.T., Tőkei Z., Jurczak G., Lazzarino F. Patterning challenges for direct metal etch of ruthenium and molybdenum at 32 nm metal pitch and below // J. Vac. Sci. Technol. B. 2022. V. 40. P. 032802.
- Hsu C.C., Coburn J.W., Graves D.B. Etching of ruthenium coatings in O2 - and Cl2 -containing plasmas // J. Vac. Sci. Technol. A. 2006. V. 24. P. 1.
- Kim H.W., Ju B-S., Kang C.-J. High-rate Ru electrode etching using O/Cl inductively coupled plasma // Microelectronic Engineering. 2003. V. 65. P. 319–326.
- Kim H.W. Characteristics of Ru etching using ICP and helicon O2 /Cl2 plasmas // Thin Solid Films. 2005. V. 475. P. 32–35.
- Yunogami T., Nojiri K. Anisotropic etching of RuO2 and Ru with high aspect ratio for gigabit dynamic random access memory // J. Vac. Sci. Technol. B. 2000. V. 18. P. 1911.
- Guha J., Donnelly V.M. Studies of chlorine-oxygen plasmas and evidence for heterogeneous formation of ClO and ClO2 // J. Appl. Phys. 2009. V.105. P. 113307.
- Imai M., Matsui M., Sugano R., Shiota T., Takasaki Ko-ichi, Miura M., Ishii Y., Kuwahara K. Activation mechanism of ruthenium etching by Cl based radicals in O2 /Cl2 plasma. Jpn. J. Appl. Phys. 2023. V. 62. P. SI1014.
- Hwang S.M., Garay A.A., Lee W.I., Chung C.W. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture. Thin Solid Films. 2015. V. 587. P. 28–33.
- Hwang S.M., Garay A.A., Choi J.H., Chung C.W. Etch characteristics of Ru thin films using O2 /Ar, CH4 /Ar, and O2 /CH4 /Ar plasmas. Thin Solid Films. 2016. V. 615. P. 311–317.
- Pan W., Desu S.B. Reactive Ion Etching of RuO2 Films // Phys. stat. sol. (a). 1997. V. 161. P. 201–215.
- Lee E-J., Kim J-W., Lee W-J. Reactive Ion Etching Mechanism of RuO2 Thin Films in Oxygen Plasma with the Addition of CF4, Cl2, and N2 // Jpn. J. Appl. Phys. 1998. V. 37. P. 2634
- Амиров И.И., Куприянов А.Н., Изюмов М.О., Мазалецкий Л.С. Получение цветного нанострукту-рированного слоя аморфного кремния при травлении в хлорсодержащей плазме // Письма в ЖТФ. 2023. Т. 49. Вып. 8. С. 25–28.
- Ullal S.J., Godfrey A.R., Edelberg E., Braly L., Vahedi V., Aydil E.S. Effect of chamber wall conditions on Cl and Cl2 concentrations in an inductively coupled plasma reactor // J. Vac. Sci. Technol. A. 2002. V. 20. P. 43–52.
- Tinck S., Boullart W., Bogaert A. Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating // Plasma Sources Sci. Technol. 2011. V. 20. P. 045012.
- Bogdanova M., Lopaev D.V., Rakhimova T.V., Voloshin D.G., Zotovich A., Zyryanov S. “Virtual IED sensor” for df rf CCP discharges // Plasma Sources Sci. Technol. 2021. V. 30. P. 075020.
- Voloshin D.G., Rakhimova T.V., Kropotkin A., Amirov I.I., Izyumov M.O., Lopaev D, Zotovich A., Zyryanov S.M. Plasma density determination from ion current to cylindrical Langmuir probe with validation on hairpin probe measurements // Plasma Sources Sci. Technol. 2023. V. 32. P. 044001.
- Fuller N.C.M., Herman I.P., Donnelly V.M. Optical actinometry of Cl2, Cl, Cl+, and Ar+ densities in inductively coupled Cl2-Ar plasmas // J. Appl. Phys. 2001. V. 90. N 7. P. 3182.
- Donnelly V.M., Malyshev M.V., Schabel M., Kornblit A., Tai W., Herman I.P., Fuller N.C.M. Optical plasma emission spectroscopy of etching plasmas used in Si-based semiconductor processing // Plasma Sources Sci. Technol. 2002. V. 11. P. A26–A30.
- Lopaev D.V., Volynets A.V., Zyryanov, S.M., Zotovich A.I., Rakhimov A.T. // Actinometry of O, N and F atoms, J. Phys. D: Appl. Phys., 2017. Vol. 50. P. 075202.
- Amirov I.I., Izyumov M.O., Naumov V.V., Gorlachev E.S. Ion-plasma sputtering of Co and Mo nanometer thin films near the sputtering threshold // J. Phys. D: Appl. Phys. 2021. V. 54. P. 065204.
- Kropotkin A.N., Voloshin D.G. Simulation of an inductive discharge in argon with the gas flow and inhomogeneous gas temperature // Plasma Physics Reports. 2019. V. 45. P. 786–797.
- Kropotkin A.N., Voloshin D.G. ICP argon dischargesimulation: the role of ion inertia and additional RFbias // Physics of Plasmas. 2020. V. 27. N. 5. P. 053507.
- Hsu C-C., Nierode M.A., Coburn J.W., Graves D.B. Comparison of model and experiment for Ar, Ar/O2 and Ar/O2/Cl2 inductively coupled plasmas // J. Phys. D: Appl. Phys. 2006. V. 39. P. 3272–3284.
- Kawaguchi S., Takahashi K., Satoh K. Electron collision cross section set of Cl2 gas and electron transport analysis in Cl2 gas and Cl2 /N2 mixtures // Jpn. J. Appl. Phys. 2020. V. 59. SHHA09.
- Booth J.P., Chattejee A., Guaitella O., Lopaev D. Quenching of O 2 (b1Σg+) by O( 3 P) atoms. Effect of gas temperature // Plasma Sources Sci. Technol. 2022. V. 31. P. 065012.
- Kropotkin A.N., Chukalovsky A.A., Kurnosov A.K., Rakhimova T.V., Palov A.P. Numerical model of a gaseous inductive discharge in oxygen, taking into account the complete scheme of the vibrational kinetics of O2 molecules // Materials. Technologies. Design. 2023. V. 5. N. 2. P. 12.
补充文件
