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Carrier Scattering Analysis in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier
- Authors: Gusev A.S.1, Sultanov A.O.1, Katkov A.V.1, Ryndya S.M.1, Siglovaya N.V.1, Klochkov A.N.1, Ryzhuk R.V.1, Kargin N.I.1, Borisenko D.P.1
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Affiliations:
- National Research Nuclear University MEPhI
- Issue: Vol 53, No 3 (2024)
- Pages: 265-273
- Section: ПРИБОРЫ
- URL: https://bakhtiniada.ru/0544-1269/article/view/267572
- DOI: https://doi.org/10.31857/S0544126924030086
- ID: 267572
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Abstract
Experimental AlN/GaN heterostructures (HSs) with an ultrathin AlN barrier were obtained using molecular beam epitaxy with plasma activation of nitrogen. The layer resistance of the optimized structures was less than 230 Ω/¨. The scattering processes that limit the mobility of two-dimensional electron gas in undoped AlN/GaN HSs with an ultrathin AlN barrier have been studied. It is shown that in the ns range characteristic of AlN/GaN HEMT HSs (ns > 1 × 1013 cm–2), a noticeable contribution to the scattering of charge carriers is made by the roughness of the heterointerface.
About the authors
A. S. Gusev
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
A. O. Sultanov
National Research Nuclear University MEPhI
Author for correspondence.
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
A. V. Katkov
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
S. M. Ryndya
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
N. V. Siglovaya
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
A. N. Klochkov
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
R. V. Ryzhuk
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
N. I. Kargin
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
D. P. Borisenko
National Research Nuclear University MEPhI
Email: AOSultanov@mephi.ru
Russian Federation, Moscow
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