电邮这篇文章 Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses
- 作者: Belik V.P.1, Vasyutinskii O.S.1, Kukin A.V.1, Petrov M.A.1,2, Popov R.S.1,2, Terukov E.I.1,3
-
隶属关系:
- Ioffe Physical Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- R&D Center for Thin-Film Technologies in Energetics
- 期: 卷 42, 编号 8 (2016)
- 页面: 788-791
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/200371
- DOI: https://doi.org/10.1134/S1063785016080058
- ID: 200371
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.
作者简介
V. Belik
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: v.belik@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
O. Vasyutinskii
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Kukin
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Petrov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251
R. Popov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251
E. Terukov
Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics
Email: v.belik@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194064
补充文件
