Мақаланы E-mail арқылы жіберу Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses
- Авторлар: Belik V.P.1, Vasyutinskii O.S.1, Kukin A.V.1, Petrov M.A.1,2, Popov R.S.1,2, Terukov E.I.1,3
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Мекемелер:
- Ioffe Physical Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- R&D Center for Thin-Film Technologies in Energetics
- Шығарылым: Том 42, № 8 (2016)
- Беттер: 788-791
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/200371
- DOI: https://doi.org/10.1134/S1063785016080058
- ID: 200371
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Аннотация
Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.
Авторлар туралы
V. Belik
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: v.belik@mail.ioffe.ru
Ресей, St. Petersburg, 194021
O. Vasyutinskii
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Kukin
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Petrov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
R. Popov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
E. Terukov
Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics
Email: v.belik@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194064
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