Отправить статью по E-mail Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses
- Авторы: Belik V.P.1, Vasyutinskii O.S.1, Kukin A.V.1, Petrov M.A.1,2, Popov R.S.1,2, Terukov E.I.1,3
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Учреждения:
- Ioffe Physical Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- R&D Center for Thin-Film Technologies in Energetics
- Выпуск: Том 42, № 8 (2016)
- Страницы: 788-791
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/200371
- DOI: https://doi.org/10.1134/S1063785016080058
- ID: 200371
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Аннотация
Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.
Об авторах
V. Belik
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: v.belik@mail.ioffe.ru
Россия, St. Petersburg, 194021
O. Vasyutinskii
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Kukin
Ioffe Physical Technical Institute
Email: v.belik@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Petrov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 195251
R. Popov
Ioffe Physical Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: v.belik@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 195251
E. Terukov
Ioffe Physical Technical Institute; R&D Center for Thin-Film Technologies in Energetics
Email: v.belik@mail.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194064
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