Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The postgrowth processing of mesa structures for multijunction solar cells based on GaInP/GaInAs/Ge heterostructure has been studied. Methods of wet chemical and electrochemical etching are considered, and a technology of forming a separation mesa structure is proposed that ensures improved surface quality and profile of the side wall of a mesa for heterostructures with various compositions of layers.

Sobre autores

A. Malevskaya

Ioffe Institute, Russian Academy of Sciences

Autor responsável pela correspondência
Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

N. Il’inskaya

Ioffe Institute, Russian Academy of Sciences

Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

V. Andreev

Ioffe Institute, Russian Academy of Sciences

Email: amalevskaya@mail.ioffe.ru
Rússia, St. Petersburg, 194021

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2019