Email this article Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells
- Authors: Malevskaya A.V.1, Il’inskaya N.D.1, Andreev V.M.1
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Affiliations:
- Ioffe Institute, Russian Academy of Sciences
- Issue: Vol 45, No 12 (2019)
- Pages: 1230-1232
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208509
- DOI: https://doi.org/10.1134/S1063785019120241
- ID: 208509
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Abstract
The postgrowth processing of mesa structures for multijunction solar cells based on GaInP/GaInAs/Ge heterostructure has been studied. Methods of wet chemical and electrochemical etching are considered, and a technology of forming a separation mesa structure is proposed that ensures improved surface quality and profile of the side wall of a mesa for heterostructures with various compositions of layers.
About the authors
A. V. Malevskaya
Ioffe Institute, Russian Academy of Sciences
Author for correspondence.
Email: amalevskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. D. Il’inskaya
Ioffe Institute, Russian Academy of Sciences
Email: amalevskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. M. Andreev
Ioffe Institute, Russian Academy of Sciences
Email: amalevskaya@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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