Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells
- 作者: Malevskaya A.V.1, Il’inskaya N.D.1, Andreev V.M.1
-
隶属关系:
- Ioffe Institute, Russian Academy of Sciences
- 期: 卷 45, 编号 12 (2019)
- 页面: 1230-1232
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208509
- DOI: https://doi.org/10.1134/S1063785019120241
- ID: 208509
如何引用文章
详细
The postgrowth processing of mesa structures for multijunction solar cells based on GaInP/GaInAs/Ge heterostructure has been studied. Methods of wet chemical and electrochemical etching are considered, and a technology of forming a separation mesa structure is proposed that ensures improved surface quality and profile of the side wall of a mesa for heterostructures with various compositions of layers.
作者简介
A. Malevskaya
Ioffe Institute, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Il’inskaya
Ioffe Institute, Russian Academy of Sciences
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Andreev
Ioffe Institute, Russian Academy of Sciences
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
补充文件
