Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells


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The postgrowth processing of mesa structures for multijunction solar cells based on GaInP/GaInAs/Ge heterostructure has been studied. Methods of wet chemical and electrochemical etching are considered, and a technology of forming a separation mesa structure is proposed that ensures improved surface quality and profile of the side wall of a mesa for heterostructures with various compositions of layers.

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A. Malevskaya

Ioffe Institute, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Il’inskaya

Ioffe Institute, Russian Academy of Sciences

Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Andreev

Ioffe Institute, Russian Academy of Sciences

Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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