Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells
- 作者: Gorbatsevich A.A.1,2, Danilin A.B.3, Korneev V.I.1, Magomedbekov E.P.4, Molin A.A.5
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隶属关系:
- National Research University MIET
- Lebedev Physical Institute
- CJSC Innotra
- Mendeleev University of Chemical Technology of Russia
- JSC Atommed Center
- 期: 卷 61, 编号 7 (2016)
- 页面: 1053-1059
- 栏目: Solid State Electronics
- URL: https://bakhtiniada.ru/1063-7842/article/view/197570
- DOI: https://doi.org/10.1134/S1063784216070148
- ID: 197570
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详细
Beta-voltaic cells based on standard silicon solar cells with bilateral coating with beta-radiation sources in the form of 63Ni isotope have been studied experimentally and by numerical simulation. The optimal parameters of the cell, including its thickness, the doping level of the substrate, the depth of the p–n junction on its front side, and the p+ layer on the back side, as well as the activity of the source material, have been calculated. The limiting theoretical values of the open-circuit voltage (0.26 V), short-circuiting current (2.1 μA), the output power of the cell (0.39 μW), and the efficiency of the conversion of the radioactive energy onto the electric energy (4.8%) have been determined for a beta-source activity of 40 mCi. The results of numerical analysis have been compared with the experimental data.
作者简介
A. Gorbatsevich
National Research University MIET; Lebedev Physical Institute
Email: kvi_07@mail.ru
俄罗斯联邦, Kashirskoe sh. 31, Moscow, 124498; Leninskii pr. 59, Moscow, 119991
A. Danilin
CJSC Innotra
Email: kvi_07@mail.ru
俄罗斯联邦, ul. Kar’er 2A, Moscow, 117449
V. Korneev
National Research University MIET
编辑信件的主要联系方式.
Email: kvi_07@mail.ru
俄罗斯联邦, Kashirskoe sh. 31, Moscow, 124498
E. Magomedbekov
Mendeleev University of Chemical Technology of Russia
Email: kvi_07@mail.ru
俄罗斯联邦, Miusskaya pl. 9, Moscow, 125047
A. Molin
JSC Atommed Center
Email: kvi_07@mail.ru
俄罗斯联邦, Varshavskoe sh. 46, Moscow, 115230
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