Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells
- Авторлар: Gorbatsevich A.A.1,2, Danilin A.B.3, Korneev V.I.1, Magomedbekov E.P.4, Molin A.A.5
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Мекемелер:
- National Research University MIET
- Lebedev Physical Institute
- CJSC Innotra
- Mendeleev University of Chemical Technology of Russia
- JSC Atommed Center
- Шығарылым: Том 61, № 7 (2016)
- Беттер: 1053-1059
- Бөлім: Solid State Electronics
- URL: https://bakhtiniada.ru/1063-7842/article/view/197570
- DOI: https://doi.org/10.1134/S1063784216070148
- ID: 197570
Дәйексөз келтіру
Аннотация
Beta-voltaic cells based on standard silicon solar cells with bilateral coating with beta-radiation sources in the form of 63Ni isotope have been studied experimentally and by numerical simulation. The optimal parameters of the cell, including its thickness, the doping level of the substrate, the depth of the p–n junction on its front side, and the p+ layer on the back side, as well as the activity of the source material, have been calculated. The limiting theoretical values of the open-circuit voltage (0.26 V), short-circuiting current (2.1 μA), the output power of the cell (0.39 μW), and the efficiency of the conversion of the radioactive energy onto the electric energy (4.8%) have been determined for a beta-source activity of 40 mCi. The results of numerical analysis have been compared with the experimental data.
Авторлар туралы
A. Gorbatsevich
National Research University MIET; Lebedev Physical Institute
Email: kvi_07@mail.ru
Ресей, Kashirskoe sh. 31, Moscow, 124498; Leninskii pr. 59, Moscow, 119991
A. Danilin
CJSC Innotra
Email: kvi_07@mail.ru
Ресей, ul. Kar’er 2A, Moscow, 117449
V. Korneev
National Research University MIET
Хат алмасуға жауапты Автор.
Email: kvi_07@mail.ru
Ресей, Kashirskoe sh. 31, Moscow, 124498
E. Magomedbekov
Mendeleev University of Chemical Technology of Russia
Email: kvi_07@mail.ru
Ресей, Miusskaya pl. 9, Moscow, 125047
A. Molin
JSC Atommed Center
Email: kvi_07@mail.ru
Ресей, Varshavskoe sh. 46, Moscow, 115230
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