Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells


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Beta-voltaic cells based on standard silicon solar cells with bilateral coating with beta-radiation sources in the form of 63Ni isotope have been studied experimentally and by numerical simulation. The optimal parameters of the cell, including its thickness, the doping level of the substrate, the depth of the pn junction on its front side, and the p+ layer on the back side, as well as the activity of the source material, have been calculated. The limiting theoretical values of the open-circuit voltage (0.26 V), short-circuiting current (2.1 μA), the output power of the cell (0.39 μW), and the efficiency of the conversion of the radioactive energy onto the electric energy (4.8%) have been determined for a beta-source activity of 40 mCi. The results of numerical analysis have been compared with the experimental data.

Sobre autores

A. Gorbatsevich

National Research University MIET; Lebedev Physical Institute

Email: kvi_07@mail.ru
Rússia, Kashirskoe sh. 31, Moscow, 124498; Leninskii pr. 59, Moscow, 119991

A. Danilin

CJSC Innotra

Email: kvi_07@mail.ru
Rússia, ul. Kar’er 2A, Moscow, 117449

V. Korneev

National Research University MIET

Autor responsável pela correspondência
Email: kvi_07@mail.ru
Rússia, Kashirskoe sh. 31, Moscow, 124498

E. Magomedbekov

Mendeleev University of Chemical Technology of Russia

Email: kvi_07@mail.ru
Rússia, Miusskaya pl. 9, Moscow, 125047

A. Molin

JSC Atommed Center

Email: kvi_07@mail.ru
Rússia, Varshavskoe sh. 46, Moscow, 115230

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