| Шығарылым |
Атауы |
Файл |
| Том 52, № 16 (2018) |
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |
(Eng)
|
|
Sobolev M., Lazarenko A., Mizerov A., Nikitina E., Pirogov E., Timoshnev S., Bouravleuv A.
|
| Том 52, № 16 (2018) |
Nucleation and Growth Modeling of Protein Crystals in Capillaries |
(Eng)
|
|
Sokolovskii A., Besedina N., Berdnikov Y., Dubrovskii V.
|
| Том 52, № 16 (2018) |
Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation |
(Eng)
|
|
Spirina A., Nastovjak A., Neizvestny I., Shwartz N.
|
| Том 52, № 16 (2018) |
Atomic Force Microscopy Local Oxidation of GeO Thin Films |
(Eng)
|
|
Astankova K., Kozhukhov A., Gorokhov E., Azarov I., Latyshev A.
|
| Том 52, № 16 (2018) |
Luminescent Silicon Nanocrystals Prepared by Laser-Assisted Synthesis in Liquid for Imaging and Photovoltaic Applications |
(Eng)
|
|
Tarasenko N., Butsen A., Nevar A., Tarasenka N., Stankevičius E., Gečys P., Trusovas R., Daugnoraitė E., Račiukaitis G.
|
| Том 52, № 16 (2018) |
Growth Modes of GaN Plasma-Assisted MBE Nanowires |
(Eng)
|
|
Berdnikov Y., Sibirev N.
|
| Том 52, № 16 (2018) |
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires |
(Eng)
|
|
Bolshakov A., Cirlin G., Mukhin M., Shkoldin V., Shugurov K., Mozharov A., Sapunov G., Fedorov V., Dvoretckaia L., Mukhin I.
|
| Том 52, № 16 (2018) |
Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching |
(Eng)
|
|
Fedorov V., Cirlin G., Shkoldin V., Shugurov K., Mozharov A., Kirilenko D., Sapunov G., Dvoretckaia L., Bolshakov A., Mukhin I.
|
| Том 52, № 16 (2018) |
InGaN/GaN QDs Nanorods: Processing and Properties |
(Eng)
|
|
Kotlyar K., Soshnikov I., Morozov I., Berezovskaya T., Kryzhanovskaya N., Kudryashov D., Lysak V.
|
| Том 52, № 16 (2018) |
Formation and Properties of New Types of Metal–Dielectric Nanostructures for Creating Optical Metamaterials |
(Eng)
|
|
Kazak N., Agabekov V., Kurilkina S., Belyi V.
|
| Том 52, № 16 (2018) |
New Advanced Hybrid Organic–Inorganic Complex |
(Eng)
|
|
Lapina V., Pavich T., Pershukevich P.
|
| Том 52, № 16 (2018) |
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3 |
(Eng)
|
|
Lutsenko E., Rzheutski M., Vainilovich A., Svitsiankou I., Shulenkova V., Muravitskaya E., Alexeev A., Petrov S., Yablonskii G.
|
| Том 52, № 16 (2018) |
Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere |
(Eng)
|
|
Komarov F., Makhavikou M., Vlasukova L., Milchanin O., Skuratov V., Vuuren A., Neetling J., Parkhomenko I., Żuk J.
|
| Том 52, № 16 (2018) |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
(Eng)
|
|
Mitrofanov M., Levitskii I., Voznyuk G., Tatarinov E., Rodin S., Lundin W., Evtikhiev V., Mizerov M.
|
| Том 52, № 16 (2018) |
Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications |
(Eng)
|
|
Shubina K., Berezovskaya T., Mokhov D., Morozov I., Kotlyar K., Mizerov A., Nikitina E., Bouravleuv A.
|
| Том 52, № 16 (2018) |
Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions |
(Eng)
|
|
Sibirev N., Belyaev V., Berdnikov Y.
|
| Том 52, № 16 (2018) |
Two Methods of Calculation Ternary Nanowire Composition |
(Eng)
|
|
Sibirev N., Koryakin A., Berdnikov Y.
|
| Нәтижелер 17 - 1/17 |
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