Atomic Force Microscopy Local Oxidation of GeO Thin Films


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Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

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K. Astankova

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

编辑信件的主要联系方式.
Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090

A. Kozhukhov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090

E. Gorokhov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090

I. Azarov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

A. Latyshev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

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