Atomic Force Microscopy Local Oxidation of GeO Thin Films
- 作者: Astankova K.N.1, Kozhukhov A.S.1, Gorokhov E.B.1, Azarov I.A.1,2, Latyshev A.V.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- 期: 卷 52, 编号 16 (2018)
- 页面: 2081-2084
- 栏目: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://bakhtiniada.ru/1063-7826/article/view/205373
- DOI: https://doi.org/10.1134/S1063782618160030
- ID: 205373
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详细
Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.
作者简介
K. Astankova
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090
A. Kozhukhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090
E. Gorokhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090
I. Azarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: as-tankoff@ya.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
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