Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.

作者简介

Yu. Ezhovskii

St. Petersburg State Technological Institute (Technical University)

编辑信件的主要联系方式.
Email: office@technolog.edu.ru
俄罗斯联邦, St. Petersburg, 190013

S. Mikhailovskii

St. Petersburg State Technological Institute (Technical University)

Email: office@technolog.edu.ru
俄罗斯联邦, St. Petersburg, 190013

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2018