Email this article Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation
- Authors: Ezhovskii Y.K.1, Mikhailovskii S.V.1
-
Affiliations:
- St. Petersburg State Technological Institute (Technical University)
- Issue: Vol 92, No 3 (2018)
- Pages: 547-551
- Section: Physical Chemistry of Surface Phenomena
- URL: https://bakhtiniada.ru/0036-0244/article/view/169937
- DOI: https://doi.org/10.1134/S003602441803007X
- ID: 169937
Cite item
Open Access
Access granted
Subscription Access
Abstract
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
About the authors
Yu. K. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Author for correspondence.
Email: office@technolog.edu.ru
Russian Federation, St. Petersburg, 190013
S. V. Mikhailovskii
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
Russian Federation, St. Petersburg, 190013
Supplementary files
