Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation
- 作者: Ezhovskii Y.K.1, Mikhailovskii S.V.1
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隶属关系:
- St. Petersburg State Technological Institute (Technical University)
- 期: 卷 92, 编号 3 (2018)
- 页面: 547-551
- 栏目: Physical Chemistry of Surface Phenomena
- URL: https://bakhtiniada.ru/0036-0244/article/view/169937
- DOI: https://doi.org/10.1134/S003602441803007X
- ID: 169937
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详细
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
作者简介
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
编辑信件的主要联系方式.
Email: office@technolog.edu.ru
俄罗斯联邦, St. Petersburg, 190013
S. Mikhailovskii
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
俄罗斯联邦, St. Petersburg, 190013
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