Мақаланы E-mail арқылы жіберу Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation
- Авторлар: Ezhovskii Y.K.1, Mikhailovskii S.V.1
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Мекемелер:
- St. Petersburg State Technological Institute (Technical University)
- Шығарылым: Том 92, № 3 (2018)
- Беттер: 547-551
- Бөлім: Physical Chemistry of Surface Phenomena
- URL: https://bakhtiniada.ru/0036-0244/article/view/169937
- DOI: https://doi.org/10.1134/S003602441803007X
- ID: 169937
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Аннотация
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
Авторлар туралы
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Хат алмасуға жауапты Автор.
Email: office@technolog.edu.ru
Ресей, St. Petersburg, 190013
S. Mikhailovskii
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
Ресей, St. Petersburg, 190013
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