Enviar artigo por via de e-mail Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation
- Autores: Ezhovskii Y.K.1, Mikhailovskii S.V.1
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Afiliações:
- St. Petersburg State Technological Institute (Technical University)
- Edição: Volume 92, Nº 3 (2018)
- Páginas: 547-551
- Seção: Physical Chemistry of Surface Phenomena
- URL: https://bakhtiniada.ru/0036-0244/article/view/169937
- DOI: https://doi.org/10.1134/S003602441803007X
- ID: 169937
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Resumo
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
Sobre autores
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Autor responsável pela correspondência
Email: office@technolog.edu.ru
Rússia, St. Petersburg, 190013
S. Mikhailovskii
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
Rússia, St. Petersburg, 190013
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