Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties

S. S. Khludkov; I. A. Prudaev; O. P. Tolbanov

doi:10.1007/s11182-018-1343-4

Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties

作者: Khludkov S.S.¹, Prudaev I.A.¹, Tolbanov O.P.¹
隶属关系:
1. National Research Tomsk State University
期: 卷 60, 编号 12 (2018)
页面: 2177-2185
栏目: Physics of Semiconductors and Dielectrics
URL: https://bakhtiniada.ru/1064-8887/article/view/239873
DOI: https://doi.org/10.1007/s11182-018-1343-4
ID: 239873

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详细

An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics.