Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties
- Авторы: Khludkov S.S.1, Prudaev I.A.1, Tolbanov O.P.1
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Учреждения:
- National Research Tomsk State University
- Выпуск: Том 60, № 12 (2018)
- Страницы: 2177-2185
- Раздел: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/239873
- DOI: https://doi.org/10.1007/s11182-018-1343-4
- ID: 239873
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Аннотация
An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics.
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S. Khludkov
National Research Tomsk State University
Автор, ответственный за переписку.
Email: knludkov@sibmail.com
Россия, Tomsk
I. Prudaev
National Research Tomsk State University
Email: knludkov@sibmail.com
Россия, Tomsk
O. Tolbanov
National Research Tomsk State University
Email: knludkov@sibmail.com
Россия, Tomsk
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