Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties
- Авторлар: Khludkov S.S.1, Prudaev I.A.1, Tolbanov O.P.1
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Мекемелер:
- National Research Tomsk State University
- Шығарылым: Том 60, № 12 (2018)
- Беттер: 2177-2185
- Бөлім: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/239873
- DOI: https://doi.org/10.1007/s11182-018-1343-4
- ID: 239873
Дәйексөз келтіру
Аннотация
An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics.
Негізгі сөздер
Авторлар туралы
S. Khludkov
National Research Tomsk State University
Хат алмасуға жауапты Автор.
Email: knludkov@sibmail.com
Ресей, Tomsk
I. Prudaev
National Research Tomsk State University
Email: knludkov@sibmail.com
Ресей, Tomsk
O. Tolbanov
National Research Tomsk State University
Email: knludkov@sibmail.com
Ресей, Tomsk
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