Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties
- Authors: Khludkov S.S.1, Prudaev I.A.1, Tolbanov O.P.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 60, No 12 (2018)
- Pages: 2177-2185
- Section: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/239873
- DOI: https://doi.org/10.1007/s11182-018-1343-4
- ID: 239873
Cite item
Abstract
An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics.
Keywords
About the authors
S. S. Khludkov
National Research Tomsk State University
Author for correspondence.
Email: knludkov@sibmail.com
Russian Federation, Tomsk
I. A. Prudaev
National Research Tomsk State University
Email: knludkov@sibmail.com
Russian Federation, Tomsk
O. P. Tolbanov
National Research Tomsk State University
Email: knludkov@sibmail.com
Russian Federation, Tomsk
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