| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 59, № 2 (2016) |
Article |
Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy |
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| Том 59, № 7 (2016) |
Physics of Semiconductors and Dielectrics |
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode |
|
| Том 60, № 1 (2017) |
Article |
Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures |
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| Том 60, № 2 (2017) |
Article |
Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates |
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| Том 60, № 11 (2018) |
Article |
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator |
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| Том 60, № 12 (2018) |
Article |
Generation of Surface Defects in Epitaxial CdxHg1–xTe Layers by Soft X-ray Radiation of Laser Plasma |
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| Том 61, № 11 (2019) |
Article |
Peculiarities of Modeling the Frequency Dependences of Admittance of MIS Structure Based on Organic P3HT Film with an Insulator Al2O3 Layer |
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| Том 62, № 1 (2019) |
Article |
Electrophysical Characteristics of the Pentacene-based MIS Structures with a SiO2 Insulator |
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| Том 62, № 2 (2019) |
Physics of Semiconductors and Dielectrics |
Admittance of Organic LED Structures with an Emission YAK-203 Layer |
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| Том 62, № 5 (2019) |
Article |
Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy |
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| Том 62, № 6 (2019) |
Physics of Semiconductors and Dielectrics |
Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films |
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