Admittance of Organic LED Structures with an Emission YAK-203 Layer


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The current-voltage characteristics and admittance of multilayer structures for organic LEDs based on the PEDOT:PSS/NPD/YAK-203/BCP system have been experimentally investigated in a wide range of the measurement conditions. It is shown that at voltages corresponding to the effective radiative recombination of charge carriers, a significant decrease in the differential capacitance of the structures is observed. The frequency dependences of the normalized conductance of LED structures are in good agreement with the results of numerical simulation in the framework of the equivalent circuit method. Changes in the frequency dependences of the admittance with a change in temperature are most pronounced in the temperature range of 200–300 K and less noticeable in the temperature range of 8–200 K. From the frequency dependences of the imaginary part of impedance, the charge carrier mobilities are found at various voltages and temperatures. The mobility values obtained by this method are somewhat lower than those determined by the transient electroluminescence method. The dependence of the mobility on the electric field is well approximated by a linear function. As the temperature decreases from 300 to 220 K, the mobility decreases several times.

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A. Voitsekhovskii

National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University

编辑信件的主要联系方式.
Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk; Tomsk

S. Nesmelov

National Research Tomsk State University

Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk

S. Dzyadukh

National Research Tomsk State University

Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk

T. Kopylova

V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University

Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk

K. Degtyarenko

V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University

Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk

A. Kokhanenko

National Research Tomsk State University

Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk

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