| Edição |
Título |
Arquivo |
| Volume 60, Nº 2 (2017) |
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters |
(Eng)
|
|
Timofeev V., Nikiforov A., Kokhanenko A., Tuktamyshev A., Mashanov V., Loshkarev I., Novikov V.
|
| Volume 60, Nº 1 (2017) |
Dependences of Characteristics of Sensors Based on Tin Dioxide on the Hydrogen Concentration and Humidity of Gas Mixture |
(Eng)
|
|
Gaman V., Almaev A.
|
| Volume 59, Nº 12 (2017) |
On Dipole Moment of Impurity Carbon Nanotubes |
(Eng)
|
|
Konobeeva N., Ten A., Belonenko M.
|
| Volume 59, Nº 10 (2017) |
Stability of Quasi-Two-Dimensional Electron-Hole Liquid in Semiconductor Structures of the Type-II |
(Eng)
|
|
Vasilchenko A., Kopytov G., Krivobok V., Ermokhin D.
|
| Volume 59, Nº 9 (2017) |
Electrophysical Properties of Ge–Sb–Te Thin Films for Phase Change Memory Devices |
(Eng)
|
|
Lazarenko P., Kozyukhin S., Sherchenkov A., Babich A., Timoshenkov S., Gromov D., Zabolotskaya A., Kozik V.
|
| Volume 59, Nº 8 (2016) |
A Solid-State Sub-Nanosecond Microwave Switch |
(Eng)
|
|
Avdochenko B., Prudaev I., Tolbanov O., Chumerin P., Yurchenko V.
|
| Volume 59, Nº 7 (2016) |
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode |
(Eng)
|
|
Voitsekhovskii A., Nesmelov S., Dzyadukh S.
|
| Volume 59, Nº 6 (2016) |
Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide |
(Eng)
|
|
Kalygina V., Petrova Y., Prudaev I., Tolbanov O.
|
| Volume 59, Nº 5 (2016) |
Peculiarities of Crystal Structure of the Cubic System Compounds with T4 and T5 Space Groups |
(Eng)
|
|
Zolotarev M., Poplavnoi A.
|
| Volume 59, Nº 3 (2016) |
Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy |
(Eng)
|
|
Świątek Z., Ozga P., Izhnin I., Fitsych E., Voitsekhovskii A., Korotaev A., Mynbaev K., Varavin V., Dvoretsky S., Mikhailov N., Yakushev M., Bonchyk A., Savytsky H.
|
| Volume 59, Nº 2 (2016) |
Method of a Generalized Physical Property in the Crystal Physics Problems |
(Eng)
|
|
Davydov V., Lugina N.
|
| Volume 59, Nº 1 (2016) |
Separation of Contributions from the Ion Core and Free Charge Carriers to the Magnetic Susceptibility of an Anisotropic Semiconductor Bi2Te3–Sb2Te3 Crystal |
(Eng)
|
|
Stepanov N., Nalivkin V.
|
| Volume 58, Nº 12 (2016) |
Photoconductivity in Magnetic Field of р-Type Cadmium – Mercury – Tellurium Films Grown by Liquid Phase Epitaxy |
(Eng)
|
|
Kostyuchenko V., Protasov D., Andrusov Y., Denisov I., Voitsekhovskii A.
|
| Volume 58, Nº 11 (2016) |
Gallium Nitride: Charge Neutrality Level and Interfaces |
(Eng)
|
|
Brudnyi V.
|
| Volume 58, Nº 9 (2016) |
To a Method of Polarization-Depolarization Currents for Diagnosis of Dielectric Isolation |
(Eng)
|
|
Ambrozevich S., Sibatov R., Uchaikin D., Morozova E.
|
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