Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide
- Авторы: Kalygina V.M.1, Petrova Y.S.1, Prudaev I.A.1, Tolbanov O.P.1
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Учреждения:
- National Research Tomsk State University
- Выпуск: Том 59, № 6 (2016)
- Страницы: 757-761
- Раздел: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/237288
- DOI: https://doi.org/10.1007/s11182-016-0833-5
- ID: 237288
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Аннотация
We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy/GaAs-based metal – oxide – semiconductor structures obtained by thermal evaporation. Influence of the annealing temperature on the characteristics of the structures is established. It is found that at long-term storage in the room atmosphere, the structures do not change their properties, which is manifested in the stability of electrical characteristics.
Об авторах
V. Kalygina
National Research Tomsk State University
Автор, ответственный за переписку.
Email: kalygina@ngs.ru
Россия, Tomsk
Yu. Petrova
National Research Tomsk State University
Email: kalygina@ngs.ru
Россия, Tomsk
I. Prudaev
National Research Tomsk State University
Email: kalygina@ngs.ru
Россия, Tomsk
O. Tolbanov
National Research Tomsk State University
Email: kalygina@ngs.ru
Россия, Tomsk
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