Gallium Nitride: Charge Neutrality Level and Interfaces
- Authors: Brudnyi V.N.1
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Affiliations:
- National Research Tomsk State University
- Issue: Vol 58, No 11 (2016)
- Pages: 1613-1618
- Section: Physics of Semiconductors and Dielectrics
- URL: https://bakhtiniada.ru/1064-8887/article/view/236841
- DOI: https://doi.org/10.1007/s11182-016-0691-1
- ID: 236841
Cite item
Abstract
An analysis of experimental data revealed the dependence of the metal/n-GaN GaN(0001) barrier height on the metal work function, as predicted by the model that takes into account the charge neutrality level of the semiconductor. In case of the metal/p-GaN(Mg) barriers, significant scatter of the corresponding experimental data is observed and pinning of the near-surface Fermi level near Ev + 2.5 eV takes place in most structures, which is due to the influence of high density of interface defect states formed during the process of the GaN doping by Mg impurity.
About the authors
V. N. Brudnyi
National Research Tomsk State University
Author for correspondence.
Email: brudnyi@mail.tsu.ru
Russian Federation, Tomsk
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