Luminescence of solar cells with a-Si:H/c-Si heterojunctions


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We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

作者简介

D. Zhigunov

Moscow State University

Email: phorsh@mail.ru
俄罗斯联邦, Moscow, 119991

A. Il’in

Moscow State University; Russian Research Centre Kurchatov Institute

Email: phorsh@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123182

P. Forsh

Moscow State University; Russian Research Centre Kurchatov Institute

编辑信件的主要联系方式.
Email: phorsh@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123182

A. Bobyl’

Ioffe Physical Technical Institute

Email: phorsh@mail.ru
俄罗斯联邦, St. Petersburg, 194021

V. Verbitskii

Ioffe Physical Technical Institute

Email: phorsh@mail.ru
俄罗斯联邦, St. Petersburg, 194021

E. Terukov

Ioffe Physical Technical Institute

Email: phorsh@mail.ru
俄罗斯联邦, St. Petersburg, 194021

P. Kashkarov

Moscow State University; Russian Research Centre Kurchatov Institute

Email: phorsh@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 123182

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