Luminescence of solar cells with a-Si:H/c-Si heterojunctions
- Authors: Zhigunov D.M.1, Il’in A.S.1,2, Forsh P.A.1,2, Bobyl’ A.V.3, Verbitskii V.N.3, Terukov E.I.3, Kashkarov P.K.1,2
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Affiliations:
- Moscow State University
- Russian Research Centre Kurchatov Institute
- Ioffe Physical Technical Institute
- Issue: Vol 43, No 5 (2017)
- Pages: 496-498
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/204788
- DOI: https://doi.org/10.1134/S1063785017050261
- ID: 204788
Cite item
Abstract
We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.
About the authors
D. M. Zhigunov
Moscow State University
Email: phorsh@mail.ru
Russian Federation, Moscow, 119991
A. S. Il’in
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Russian Federation, Moscow, 119991; Moscow, 123182
P. A. Forsh
Moscow State University; Russian Research Centre Kurchatov Institute
Author for correspondence.
Email: phorsh@mail.ru
Russian Federation, Moscow, 119991; Moscow, 123182
A. V. Bobyl’
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Russian Federation, St. Petersburg, 194021
V. N. Verbitskii
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Russian Federation, St. Petersburg, 194021
E. I. Terukov
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Russian Federation, St. Petersburg, 194021
P. K. Kashkarov
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Russian Federation, Moscow, 119991; Moscow, 123182
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