Luminescence of solar cells with a-Si:H/c-Si heterojunctions
- Autores: Zhigunov D.M.1, Il’in A.S.1,2, Forsh P.A.1,2, Bobyl’ A.V.3, Verbitskii V.N.3, Terukov E.I.3, Kashkarov P.K.1,2
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Afiliações:
- Moscow State University
- Russian Research Centre Kurchatov Institute
- Ioffe Physical Technical Institute
- Edição: Volume 43, Nº 5 (2017)
- Páginas: 496-498
- Seção: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/204788
- DOI: https://doi.org/10.1134/S1063785017050261
- ID: 204788
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Resumo
We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.
Sobre autores
D. Zhigunov
Moscow State University
Email: phorsh@mail.ru
Rússia, Moscow, 119991
A. Il’in
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Rússia, Moscow, 119991; Moscow, 123182
P. Forsh
Moscow State University; Russian Research Centre Kurchatov Institute
Autor responsável pela correspondência
Email: phorsh@mail.ru
Rússia, Moscow, 119991; Moscow, 123182
A. Bobyl’
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Rússia, St. Petersburg, 194021
V. Verbitskii
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Rússia, St. Petersburg, 194021
E. Terukov
Ioffe Physical Technical Institute
Email: phorsh@mail.ru
Rússia, St. Petersburg, 194021
P. Kashkarov
Moscow State University; Russian Research Centre Kurchatov Institute
Email: phorsh@mail.ru
Rússia, Moscow, 119991; Moscow, 123182
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