Luminescence of solar cells with a-Si:H/c-Si heterojunctions


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Resumo

We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

Sobre autores

D. Zhigunov

Moscow State University

Email: phorsh@mail.ru
Rússia, Moscow, 119991

A. Il’in

Moscow State University; Russian Research Centre Kurchatov Institute

Email: phorsh@mail.ru
Rússia, Moscow, 119991; Moscow, 123182

P. Forsh

Moscow State University; Russian Research Centre Kurchatov Institute

Autor responsável pela correspondência
Email: phorsh@mail.ru
Rússia, Moscow, 119991; Moscow, 123182

A. Bobyl’

Ioffe Physical Technical Institute

Email: phorsh@mail.ru
Rússia, St. Petersburg, 194021

V. Verbitskii

Ioffe Physical Technical Institute

Email: phorsh@mail.ru
Rússia, St. Petersburg, 194021

E. Terukov

Ioffe Physical Technical Institute

Email: phorsh@mail.ru
Rússia, St. Petersburg, 194021

P. Kashkarov

Moscow State University; Russian Research Centre Kurchatov Institute

Email: phorsh@mail.ru
Rússia, Moscow, 119991; Moscow, 123182

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