The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes
- Авторы: Chistokhin I.B.1, Aksenov M.S.1,2, Valisheva N.1, Dmitriev D.V.1, Marchishin I.V.1, Toropov A.I.1, Zhuravlev K.S.1,2
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Выпуск: Том 45, № 2 (2019)
- Страницы: 180-184
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208227
- DOI: https://doi.org/10.1134/S106378501902024X
- ID: 208227
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Аннотация
Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥107 cm–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.
Об авторах
I. Chistokhin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Россия, Novosibirsk, 630090
M. Aksenov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Автор, ответственный за переписку.
Email: m.se.aksenov@gmail.com
Россия, Novosibirsk, 630090; Novosibirsk, 630090
N. A. Valisheva
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Россия, Novosibirsk, 630090
D. Dmitriev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Россия, Novosibirsk, 630090
I. Marchishin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Россия, Novosibirsk, 630090
A. Toropov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: m.se.aksenov@gmail.com
Россия, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: m.se.aksenov@gmail.com
Россия, Novosibirsk, 630090; Novosibirsk, 630090
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