Resistive switching in Au/SiO  x  /TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film

A. I. Belov; A. N. Mikhaylov; D. S. Korolev; V. A. Sergeev; I. N. Antonov; O. N. Gorshkov; D. I. Tetelbaum

doi:10.1134/S1063785016050199

Resistive switching in Au/SiO_x/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film

Authors: Belov A.I.¹, Mikhaylov A.N.¹, Korolev D.S.¹, Sergeev V.A.¹, Antonov I.N.¹, Gorshkov O.N.¹, Tetelbaum D.I.¹
Affiliations:
1. Lobachevsky University
Issue: Vol 42, No 5 (2016)
Pages: 505-508
Section: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/199114
DOI: https://doi.org/10.1134/S1063785016050199
ID: 199114

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

We have studied Au/SiO_x/TiN/Ti memristive structures obtained by magnetron sputtering, which exhibit a reproducible resistive switching effect. The influence of the thickness and stoichiometry of SiO_x layer and the area of Au electrode on the parameters of switching has been analyzed. The obtained results show evidence in favor of the filament model of resistive switching in SiO_x films.