Resistive switching in Au/SiO  x  /TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film

A. I. Belov; A. N. Mikhaylov; D. S. Korolev; V. A. Sergeev; I. N. Antonov; O. N. Gorshkov; D. I. Tetelbaum

doi:10.1134/S1063785016050199

Resistive switching in Au/SiO_x/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film

作者: Belov A.I.¹, Mikhaylov A.N.¹, Korolev D.S.¹, Sergeev V.A.¹, Antonov I.N.¹, Gorshkov O.N.¹, Tetelbaum D.I.¹
隶属关系:
1. Lobachevsky University
期: 卷 42, 编号 5 (2016)
页面: 505-508
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/199114
DOI: https://doi.org/10.1134/S1063785016050199
ID: 199114

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详细

We have studied Au/SiO_x/TiN/Ti memristive structures obtained by magnetron sputtering, which exhibit a reproducible resistive switching effect. The influence of the thickness and stoichiometry of SiO_x layer and the area of Au electrode on the parameters of switching has been analyzed. The obtained results show evidence in favor of the filament model of resistive switching in SiO_x films.