Field emission of multitip silicon structures with protection coatings

Аннотация

(0.1–0.3 cm²) area multipoint silicon emitters with two-layer metal–fullerene coatings are studied. Field-emission sources that generate currents of several tens of milliamperes that are sufficient for several millimeter- and submillimeter-wavelength microwave sources and compact X-ray sources are developed. Stable operation of multitip silicon field emitters with two-layer metal–fullerene coatings in high-voltage electronic devices is demonstrated at relatively high current output under technical vacuum conditions.