Field emission of multitip silicon structures with protection coatings


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

(0.1–0.3 cm2) area multipoint silicon emitters with two-layer metal–fullerene coatings are studied. Field-emission sources that generate currents of several tens of milliamperes that are sufficient for several millimeter- and submillimeter-wavelength microwave sources and compact X-ray sources are developed. Stable operation of multitip silicon field emitters with two-layer metal–fullerene coatings in high-voltage electronic devices is demonstrated at relatively high current output under technical vacuum conditions.

作者简介

G. Sominskii

St. Petersburg State Polytechnical University

编辑信件的主要联系方式.
Email: sominski@rphf.spbstu.ru
俄罗斯联邦, Politekhnicheskaya ul. 29, St. Petersburg, 195251

E. Taradaev

St. Petersburg State Polytechnical University

Email: sominski@rphf.spbstu.ru
俄罗斯联邦, Politekhnicheskaya ul. 29, St. Petersburg, 195251

T. Tumareva

St. Petersburg State Polytechnical University

Email: sominski@rphf.spbstu.ru
俄罗斯联邦, Politekhnicheskaya ul. 29, St. Petersburg, 195251

M. Givargizov

Shubnikov Institute of Crystallography

Email: sominski@rphf.spbstu.ru
俄罗斯联邦, Leninskii pr. 59, Moscow, 119333

A. Stepanova

Shubnikov Institute of Crystallography

Email: sominski@rphf.spbstu.ru
俄罗斯联邦, Leninskii pr. 59, Moscow, 119333

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2016