Отправить статью по E-mail Field emission of multitip silicon structures with protection coatings
- Авторы: Sominskii G.G.1, Taradaev E.P.1, Tumareva T.A.1, Givargizov M.E.2, Stepanova A.N.2
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Учреждения:
- St. Petersburg State Polytechnical University
- Shubnikov Institute of Crystallography
- Выпуск: Том 61, № 11 (2016)
- Страницы: 1711-1714
- Раздел: Radiophysics
- URL: https://bakhtiniada.ru/1063-7842/article/view/198490
- DOI: https://doi.org/10.1134/S1063784216110256
- ID: 198490
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Аннотация
(0.1–0.3 cm2) area multipoint silicon emitters with two-layer metal–fullerene coatings are studied. Field-emission sources that generate currents of several tens of milliamperes that are sufficient for several millimeter- and submillimeter-wavelength microwave sources and compact X-ray sources are developed. Stable operation of multitip silicon field emitters with two-layer metal–fullerene coatings in high-voltage electronic devices is demonstrated at relatively high current output under technical vacuum conditions.
Об авторах
G. Sominskii
St. Petersburg State Polytechnical University
Автор, ответственный за переписку.
Email: sominski@rphf.spbstu.ru
Россия, Politekhnicheskaya ul. 29, St. Petersburg, 195251
E. Taradaev
St. Petersburg State Polytechnical University
Email: sominski@rphf.spbstu.ru
Россия, Politekhnicheskaya ul. 29, St. Petersburg, 195251
T. Tumareva
St. Petersburg State Polytechnical University
Email: sominski@rphf.spbstu.ru
Россия, Politekhnicheskaya ul. 29, St. Petersburg, 195251
M. Givargizov
Shubnikov Institute of Crystallography
Email: sominski@rphf.spbstu.ru
Россия, Leninskii pr. 59, Moscow, 119333
A. Stepanova
Shubnikov Institute of Crystallography
Email: sominski@rphf.spbstu.ru
Россия, Leninskii pr. 59, Moscow, 119333
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