A mechanism of long-range order induced by random fields: Effective anisotropy created by defects
- Autores: Berzin A.A.1, Morosov A.I.2, Sigov A.S.1
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Afiliações:
- Moscow Technological University (MIREA)
- Moscow Institute of Physics and Technology (State University)
- Edição: Volume 58, Nº 9 (2016)
- Páginas: 1846-1849
- Seção: Phase Transitions
- URL: https://bakhtiniada.ru/1063-7834/article/view/198657
- DOI: https://doi.org/10.1134/S1063783416090109
- ID: 198657
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Resumo
A microscopic mechanism of the long-range order in two-dimensional space induced by random local fields of crystal defects has been found. The impurity-induced effective anisotropy has been shown to arise in the system due to anisotropic distribution of impurity-induced random local field directions in the n-dimensional space of vector order parameter with the O(n) symmetry. The expression for the effective anisotropy constant has been obtained. A weak anisotropy of the “easy axis” type transforms the X–Y model and the Heisenberg model to the class of Ising models, and brings into long-range order existence in the system.
Sobre autores
A. Berzin
Moscow Technological University (MIREA)
Email: mor-alexandr@yandex.ru
Rússia, Vernadsky pr. 78, Moscow, 119454
A. Morosov
Moscow Institute of Physics and Technology (State University)
Autor responsável pela correspondência
Email: mor-alexandr@yandex.ru
Rússia, Institutskiy per. 9, Dolgoprudny, Moscow oblast, 141700
A. Sigov
Moscow Technological University (MIREA)
Email: mor-alexandr@yandex.ru
Rússia, Vernadsky pr. 78, Moscow, 119454
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