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A mechanism of long-range order induced by random fields: Effective anisotropy created by defects


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

A microscopic mechanism of the long-range order in two-dimensional space induced by random local fields of crystal defects has been found. The impurity-induced effective anisotropy has been shown to arise in the system due to anisotropic distribution of impurity-induced random local field directions in the n-dimensional space of vector order parameter with the O(n) symmetry. The expression for the effective anisotropy constant has been obtained. A weak anisotropy of the “easy axis” type transforms the XY model and the Heisenberg model to the class of Ising models, and brings into long-range order existence in the system.

Авторлар туралы

A. Berzin

Moscow Technological University (MIREA)

Email: mor-alexandr@yandex.ru
Ресей, Vernadsky pr. 78, Moscow, 119454

A. Morosov

Moscow Institute of Physics and Technology (State University)

Хат алмасуға жауапты Автор.
Email: mor-alexandr@yandex.ru
Ресей, Institutskiy per. 9, Dolgoprudny, Moscow oblast, 141700

A. Sigov

Moscow Technological University (MIREA)

Email: mor-alexandr@yandex.ru
Ресей, Vernadsky pr. 78, Moscow, 119454

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