Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate
- Авторлар: Ovsyannikov G.A.1, Shaikhulov T.A.1, Shakhunov V.A.1, Klimov A.A.1,2, Preobrazhenskii V.L.3, Tiercelin N.2, Pernod P.2
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Мекемелер:
- Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
- Prokhorov General Physics Institute, Russian Academy of Sciences
- Шығарылым: Том 61, № 9 (2019)
- Беттер: 1665-1669
- Бөлім: Surface Physics and Thin Films
- URL: https://bakhtiniada.ru/1063-7834/article/view/206188
- DOI: https://doi.org/10.1134/S1063783419090208
- ID: 206188
Дәйексөз келтіру
Аннотация
The electron transport properties of strained thin La0.7Ba0.3MnO3 (LBMO) epitaxial films are studied. Films 40–100 nm in thickness were prepared by laser ablation at a temperature T = 700–800°C in pure oxygen atmosphere of 0.3–1 mBar. Ferroelectric crystal substrates (011)0.79PbMg1/3Nb2/3O3–0.21-PbTiO3 (PMN–PT) with a Curie temperature of 150°C and high piezoelectric constants were used to create a mechanical stress. The ferroelectric polarization and piezoelectric effects on the electrical parameters of LBMO films are studied.
Негізгі сөздер
Авторлар туралы
G. Ovsyannikov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: gena@hitech.cplire.ru
Ресей, Moscow
T. Shaikhulov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Ресей, Moscow
V. Shakhunov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Ресей, Moscow
A. Klimov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
Ресей, Moscow; Lille, F-59000
V. Preobrazhenskii
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Ресей, Moscow
N. Tiercelin
University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
Франция, Lille, F-59000
P. Pernod
University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
Франция, Lille, F-59000
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