Conductivity of Manganite Films under the Action of Tension Caused by the Deformation of Substrate
- Autores: Ovsyannikov G.A.1, Shaikhulov T.A.1, Shakhunov V.A.1, Klimov A.A.1,2, Preobrazhenskii V.L.3, Tiercelin N.2, Pernod P.2
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Afiliações:
- Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
- Prokhorov General Physics Institute, Russian Academy of Sciences
- Edição: Volume 61, Nº 9 (2019)
- Páginas: 1665-1669
- Seção: Surface Physics and Thin Films
- URL: https://bakhtiniada.ru/1063-7834/article/view/206188
- DOI: https://doi.org/10.1134/S1063783419090208
- ID: 206188
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Resumo
The electron transport properties of strained thin La0.7Ba0.3MnO3 (LBMO) epitaxial films are studied. Films 40–100 nm in thickness were prepared by laser ablation at a temperature T = 700–800°C in pure oxygen atmosphere of 0.3–1 mBar. Ferroelectric crystal substrates (011)0.79PbMg1/3Nb2/3O3–0.21-PbTiO3 (PMN–PT) with a Curie temperature of 150°C and high piezoelectric constants were used to create a mechanical stress. The ferroelectric polarization and piezoelectric effects on the electrical parameters of LBMO films are studied.
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Sobre autores
G. Ovsyannikov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: gena@hitech.cplire.ru
Rússia, Moscow
T. Shaikhulov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Rússia, Moscow
V. Shakhunov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Rússia, Moscow
A. Klimov
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences; University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
Rússia, Moscow; Lille, F-59000
V. Preobrazhenskii
Prokhorov General Physics Institute, Russian Academy of Sciences
Email: gena@hitech.cplire.ru
Rússia, Moscow
N. Tiercelin
University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
França, Lille, F-59000
P. Pernod
University of Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN
Email: gena@hitech.cplire.ru
França, Lille, F-59000
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