Email this article Charge transfer features and ferromagnetic order in semiconductor heterostructures δ-doped with manganese
- Authors: Lugovykh A.M.1, Charikova T.B.1,2, Okulov V.I.1,2, Moiseev K.D.3, Kudryavtsev Y.A.4
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Affiliations:
- Mikheev Institute of Metal Physics
- Institute of Natural Sciences
- Ioffe Institute
- National Polytechnical Institute, (Cinvestav-IPN)
- Issue: Vol 58, No 11 (2016)
- Pages: 2240-2243
- Section: Magnetism
- URL: https://bakhtiniada.ru/1063-7834/article/view/199099
- DOI: https://doi.org/10.1134/S1063783416110226
- ID: 199099
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Abstract
The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/Ga0.84In0.16As/GaAs quantum well and a δ-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.
About the authors
A. M. Lugovykh
Mikheev Institute of Metal Physics
Email: charikova@imp.uran.ru
Russian Federation, ul. S. Kovalevskoi 18, Yekaterinburg, 620990
T. B. Charikova
Mikheev Institute of Metal Physics; Institute of Natural Sciences
Author for correspondence.
Email: charikova@imp.uran.ru
Russian Federation, ul. S. Kovalevskoi 18, Yekaterinburg, 620990; pr. Lenina 51, Yekaterinburg, 620000
V. I. Okulov
Mikheev Institute of Metal Physics; Institute of Natural Sciences
Email: charikova@imp.uran.ru
Russian Federation, ul. S. Kovalevskoi 18, Yekaterinburg, 620990; pr. Lenina 51, Yekaterinburg, 620000
K. D. Moiseev
Ioffe Institute
Email: charikova@imp.uran.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
Yu. A. Kudryavtsev
National Polytechnical Institute, (Cinvestav-IPN)
Email: charikova@imp.uran.ru
Mexico, Avenida IPN 2508, Colonia Zacatenco, Mexico City, 07360
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