Charge transfer features and ferromagnetic order in semiconductor heterostructures δ-doped with manganese


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Аннотация

The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/Ga0.84In0.16As/GaAs quantum well and a δ-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.

Авторлар туралы

A. Lugovykh

Mikheev Institute of Metal Physics

Email: charikova@imp.uran.ru
Ресей, ul. S. Kovalevskoi 18, Yekaterinburg, 620990

T. Charikova

Mikheev Institute of Metal Physics; Institute of Natural Sciences

Хат алмасуға жауапты Автор.
Email: charikova@imp.uran.ru
Ресей, ul. S. Kovalevskoi 18, Yekaterinburg, 620990; pr. Lenina 51, Yekaterinburg, 620000

V. Okulov

Mikheev Institute of Metal Physics; Institute of Natural Sciences

Email: charikova@imp.uran.ru
Ресей, ul. S. Kovalevskoi 18, Yekaterinburg, 620990; pr. Lenina 51, Yekaterinburg, 620000

K. Moiseev

Ioffe Institute

Email: charikova@imp.uran.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

Yu. Kudryavtsev

National Polytechnical Institute, (Cinvestav-IPN)

Email: charikova@imp.uran.ru
Мексика, Avenida IPN 2508, Colonia Zacatenco, Mexico City, 07360

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