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GaPxAs1−x SOLID SOLUTION MBE ON (001) VICINAL SUBSTRATES: KINETIC MODEL FOR COMPOSITION FORMATION IN THE ANIONIC SUBLATTICE
- Authors: Putyato M.A.1, Emel'yanov E.A.1, Petrushkov M.O.1, Vasev A.V.1, Cemyagin B.R.1, Preobrazhenskiy V.V.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
- Issue: Vol 165, No 1 (2024)
- Pages: 51-64
- Section: Articles
- URL: https://bakhtiniada.ru/0044-4510/article/view/256897
- DOI: https://doi.org/10.31857/S0044451024010061
- ID: 256897
Cite item
Abstract
Kinetic model for composition formation in the anionic sublattice of the GaPxAs1-x solid solution during MBE on the (001) vicinal surface from As2 and P2 beam is proposed. The model was based on a twodimensional layered growth mechanism according to which terraces with a reconstructed surface are successively build up in growth areas localized in step kinks. The elementary mass transfer processes in the growth areas, on the terrace surfaces and their edges were considered. The model kinetic constants were determined by comparing the calculated values of x with experimental data. The impact of the substrate temperature, growth rate, and surface misorientation angle value on the solid solution composition is explained by exchange processes in the anionic layer on the surface and edges of terraces located outside growth areas.
Keywords
About the authors
M. A. Putyato
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Russian Federation, 630090, Novosibirsk
E. A. Emel'yanov
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Russian Federation, 630090, Novosibirsk
M. O. Petrushkov
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Russian Federation, 630090, Novosibirsk
A. V. Vasev
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Russian Federation, 630090, Novosibirsk
B. R. Cemyagin
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Russian Federation, 630090, Novosibirsk
V. V. Preobrazhenskiy
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Author for correspondence.
Email: e2a@isp.nsc.ru
Russian Federation, 630090, Novosibirsk
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