Мақаланы E-mail арқылы жіберу GaPxAs1−x SOLID SOLUTION MBE ON (001) VICINAL SUBSTRATES: KINETIC MODEL FOR COMPOSITION FORMATION IN THE ANIONIC SUBLATTICE
- Авторлар: Putyato M.A.1, Emel'yanov E.A.1, Petrushkov M.O.1, Vasev A.V.1, Cemyagin B.R.1, Preobrazhenskiy V.V.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
- Шығарылым: Том 165, № 1 (2024)
- Беттер: 51-64
- Бөлім: Articles
- URL: https://bakhtiniada.ru/0044-4510/article/view/256897
- DOI: https://doi.org/10.31857/S0044451024010061
- ID: 256897
Дәйексөз келтіру
Аннотация
Kinetic model for composition formation in the anionic sublattice of the GaPxAs1-x solid solution during MBE on the (001) vicinal surface from As2 and P2 beam is proposed. The model was based on a twodimensional layered growth mechanism according to which terraces with a reconstructed surface are successively build up in growth areas localized in step kinks. The elementary mass transfer processes in the growth areas, on the terrace surfaces and their edges were considered. The model kinetic constants were determined by comparing the calculated values of x with experimental data. The impact of the substrate temperature, growth rate, and surface misorientation angle value on the solid solution composition is explained by exchange processes in the anionic layer on the surface and edges of terraces located outside growth areas.
Негізгі сөздер
Авторлар туралы
M. Putyato
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, 630090, Novosibirsk
E. Emel'yanov
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, 630090, Novosibirsk
M. Petrushkov
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, 630090, Novosibirsk
A. Vasev
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, 630090, Novosibirsk
B. Cemyagin
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Email: e2a@isp.nsc.ru
Ресей, 630090, Novosibirsk
V. Preobrazhenskiy
Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: e2a@isp.nsc.ru
Ресей, 630090, Novosibirsk
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