GaPxAs1−x SOLID SOLUTION MBE ON (001) VICINAL SUBSTRATES: KINETIC MODEL FOR COMPOSITION FORMATION IN THE ANIONIC SUBLATTICE

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Kinetic model for composition formation in the anionic sublattice of the GaPxAs1-x solid solution during MBE on the (001) vicinal surface from As2 and P2 beam is proposed. The model was based on a twodimensional layered growth mechanism according to which terraces with a reconstructed surface are successively build up in growth areas localized in step kinks. The elementary mass transfer processes in the growth areas, on the terrace surfaces and their edges were considered. The model kinetic constants were determined by comparing the calculated values of x with experimental data. The impact of the substrate temperature, growth rate, and surface misorientation angle value on the solid solution composition is explained by exchange processes in the anionic layer on the surface and edges of terraces located outside growth areas.

Sobre autores

M. Putyato

Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences

Email: e2a@isp.nsc.ru
Rússia, 630090, Novosibirsk

E. Emel'yanov

Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences

Email: e2a@isp.nsc.ru
Rússia, 630090, Novosibirsk

M. Petrushkov

Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences

Email: e2a@isp.nsc.ru
Rússia, 630090, Novosibirsk

A. Vasev

Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences

Email: e2a@isp.nsc.ru
Rússia, 630090, Novosibirsk

B. Cemyagin

Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences

Email: e2a@isp.nsc.ru
Rússia, 630090, Novosibirsk

V. Preobrazhenskiy

Rzhanov Institute of Semiconductor Physics Siberian Branch of the Russian Academy of Sciences

Autor responsável pela correspondência
Email: e2a@isp.nsc.ru
Rússia, 630090, Novosibirsk

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