Optical and Electrical Properties of Copper Zinc Tin Sulfide Films As Solar Cell Absorber Materials Prepared by a Compacting Process
- Авторы: Wenliang Fan 1,2, Wang Y.1, Zhu J.1, Ban S.L.1
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Учреждения:
- Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University
- Ordos Institute of Technology
- Выпуск: Том 92, № 10 (2018)
- Страницы: 2086-2091
- Раздел: Photochemistry and Magnetochemistry
- URL: https://bakhtiniada.ru/0036-0244/article/view/170181
- DOI: https://doi.org/10.1134/S0036024418100060
- ID: 170181
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Аннотация
The copper zinc tin sulfide (CZTS) thin films are prepared by a promising non vacuum compacting process based on ball milling and coating technique. The results reveal that a well-formed crystalline structure of kesterite CZTS are observed after sintering at 450°C. The optical band gap is 1.49, 1.59, 1.33, and 1.21 eV for the films with Cu/Zn/Sn atomic radio of 1.00 : 0.50 : 0.52, 1.00 : 0.44 : 0.41, 1.00 : 0.60 : 0.49, and 1.00 : 0.49 : 0.58, respectively. The compacting process can further improve the performances of CZTS film. For the CZTS thin film with Cu/Zn/Sn atomic radio of 1.00 : 0.60 : 0.49, the surface morphology of the film is significantly improved by a compacting process applied to the coating films before sintering, and the resistivity decreased from 23.67 to 1.18 Ω cm with the compacting pressure increasing from 0 to 200 MPa at room temperature, which showing a promising application of the compacting process method in fabricating CZTS film for solar cells.
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Об авторах
Wenliang Fan
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University; Ordos Institute of Technology
Email: tsting2006@163.com
Китай, Hohhot, 010021; Ordos, 017000
Yanlai Wang
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University
Автор, ответственный за переписку.
Email: tsting2006@163.com
Китай, Hohhot, 010021
Jun Zhu
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University
Email: tsting2006@163.com
Китай, Hohhot, 010021
S. Ban
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University
Email: tsting2006@163.com
Китай, Hohhot, 010021
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