Optical and Electrical Properties of Copper Zinc Tin Sulfide Films As Solar Cell Absorber Materials Prepared by a Compacting Process
- Authors: Wenliang Fan 1,2, Wang Y.1, Zhu J.1, Ban S.L.1
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Affiliations:
- Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University
- Ordos Institute of Technology
- Issue: Vol 92, No 10 (2018)
- Pages: 2086-2091
- Section: Photochemistry and Magnetochemistry
- URL: https://bakhtiniada.ru/0036-0244/article/view/170181
- DOI: https://doi.org/10.1134/S0036024418100060
- ID: 170181
Cite item
Abstract
The copper zinc tin sulfide (CZTS) thin films are prepared by a promising non vacuum compacting process based on ball milling and coating technique. The results reveal that a well-formed crystalline structure of kesterite CZTS are observed after sintering at 450°C. The optical band gap is 1.49, 1.59, 1.33, and 1.21 eV for the films with Cu/Zn/Sn atomic radio of 1.00 : 0.50 : 0.52, 1.00 : 0.44 : 0.41, 1.00 : 0.60 : 0.49, and 1.00 : 0.49 : 0.58, respectively. The compacting process can further improve the performances of CZTS film. For the CZTS thin film with Cu/Zn/Sn atomic radio of 1.00 : 0.60 : 0.49, the surface morphology of the film is significantly improved by a compacting process applied to the coating films before sintering, and the resistivity decreased from 23.67 to 1.18 Ω cm with the compacting pressure increasing from 0 to 200 MPa at room temperature, which showing a promising application of the compacting process method in fabricating CZTS film for solar cells.
Keywords
About the authors
Wenliang Fan
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University; Ordos Institute of Technology
Email: tsting2006@163.com
China, Hohhot, 010021; Ordos, 017000
Yanlai Wang
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University
Author for correspondence.
Email: tsting2006@163.com
China, Hohhot, 010021
Jun Zhu
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University
Email: tsting2006@163.com
China, Hohhot, 010021
S. L. Ban
Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,School of Physical Science and Technology, Inner Mongolia University
Email: tsting2006@163.com
China, Hohhot, 010021
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