Bulk and surface properties of ZnTe–ZnS system semiconductors


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Physicochemical studies of a new ZnTe–ZnS semiconductor system are conducted. It is found that at certain ratios of binary components, substitutional solid solutions with a cubic sphalerite structure are formed in this system. Interrelated laws governing changes in the bulk (crystal chemical, structural) and surface (acid–base) properties with varying system composition are identified. It is assumed they can be attributed to the nature of the active (acid–base) sites. The presented data, observed patterns, and an interpretation of them are used not only to confirm earlier proposed mechanisms of atomic–molecular interaction on diamond-like semiconductors, but to search for promising materials for use in highly sensitive selective sensors for environmental and medical purposes as well.

作者简介

I. Kirovskaya

Omsk State Technical University

编辑信件的主要联系方式.
Email: kirovskaya@omgtu.ru
俄罗斯联邦, Omsk, 644050

E. Mironova

Omsk State Technical University

Email: kirovskaya@omgtu.ru
俄罗斯联邦, Omsk, 644050

B. Kosarev

Omsk State Technical University

Email: kirovskaya@omgtu.ru
俄罗斯联邦, Omsk, 644050

P. Nor

Omsk State Technical University

Email: kirovskaya@omgtu.ru
俄罗斯联邦, Omsk, 644050

T. Bukashkina

Omsk State Technical University

Email: kirovskaya@omgtu.ru
俄罗斯联邦, Omsk, 644050

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